Spatial variation of ferroelectric properties in Pb(Zr0.3, Ti0.7)O3 thin films studied by atomic force microscopy

Christman, J. A.; Kim, Seung‐Hyun; Maiwa, Hiroshi; Maria, Jon Paul; Rodriguez, Brian J.; Kingon, Angus I.; Nemanich, R. J.

doi:10.1063/1.373492

Cited by 47 publications

(26 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Vertical PFM ͑VPFM͒ and lateral PFM ͑LPFM͒ imaging methods, used to detect out-of-plane and in-plane polarization components, respectively, have been described in detail elsewhere. [5][6][7][11][12][13][14][15][16][17][18] The modulation voltage ͑typically 0.6 Vrms at 10 kHz͒ was applied to the top electrode of the capacitor using a conduca͒ Author to whom correspondence should be addressed; electronic mail: alexei -gruverman@ncsu.edu tive PFM tip, which was also used to detect the piezoelectric response of the capacitor. Commercially available Pt-coated Si rectangular cantilevers ͑1.0-2.6 N/m force constant͒ have been used in this study.…”

Section: Methodsmentioning

confidence: 99%

Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

Rodriguez

Gruverman

Kingon

et al. 2004

Journal of Applied Physics

View full text Add to dashboard Cite

Nemanich, R. J.; and Cross, J. S., "Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy" (2004 A combination of vertical and lateral piezoresponse force microscopy ͑VPFM and LPFM, respectively͒ has been used to map the out-of-plane and in-plane polarization distribution, respectively, of ͑111͒-oriented Pb(Zr,Ti)O 3 -based ͑PZT͒ ferroelectric patterned and reactively-ion-etched capacitors. While VPFM and LPFM have previously been used to determine the orientation of the polarization vector in ferroelectric crystals and thin films, this is the first time the technique has been applied to determine the three-dimensional polarization distribution in thin-film capacitors and, as such, is of importance to the implementation of nonvolatile ferroelectric random access memory. Sequential VPFM and LPFM imaging have been performed in poled 1 ϫ1.5 m 2 PZT capacitors. Subsequent quantitative analysis of the obtained piezoresponse images allowed the three-dimensional reconstruction of the domain arrangement in the PZT layers of the capacitors. It has been found that the poled capacitors, which appear as uniformly polarized in VPFM, are in fact in a polydomain state as is detected by LPFM and contain 90°domain walls. Despite the polycrystallinity of the PZT layer, regions larger than the average PZT grain size are found to have the same polarization orientation. This technique has potential for clarifying the switching behavior and imprint mechanism in micro-and nanoscale ferroelectric capacitors.

show abstract

Section: Methodsmentioning

confidence: 99%

Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

Rodriguez

Gruverman

Kingon

et al. 2004

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The measured signal at each point can then be represented as a local on-field and/or off-field hysteresis loop, containing information on local ferroelectric properties and their evolution with bias. After the introduction by Hidaka et al, 156 this technique was rapidly adopted by the community and extensively used to study polarization switching and spatial variations of ferroelectric behavior in PZT, 59,133,134,157,158 BaTiO3, 159,160 Pb0.76Ca0.24TiO3, 161 and more.…”

Section: Iib Local Switching Spectroscopymentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

270

206

View full text Add to dashboard Cite

Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time-and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures, walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize 1 in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on nearly-ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk, or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors, and possible experimental strategies for their identification.3

show abstract

“…An open loop version of SSPM, in which the feedback is disengaged and the oscillation amplitude in the noncontact regime is collected as the image, has also been reported. 8 In many cases, the morphological information on domain structure and orientation obtained from SPM images is sufficient, and numerous observations of local domain dynamics as related to polarization switching processes, [9][10][11] ferroelectric fatigue, [12][13][14][15] phase transitions, 16 -19 mechanical stresses, 20 etc., have been made. However, analysis of local ferroelectric properties including hysteresis measurements, 21 stress effects in thin films, 22 size dependence of ferroelectric properties, 23,24 etc., requires quantitative interpretation of the SPM interaction.…”

Section: Introductionmentioning

confidence: 99%

Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces

2002

View full text Add to dashboard Cite

In order to determine the origin of image contrast in piezoresponse force microscopy (PFM), analytical descriptions of the complex interactions between a small tip and ferroelectric surface are derived for several sets of limiting conditions. Image charge calculations are used to determine potential and field distributions at the tip-surface junction between a spherical tip and an anisotropic dielectric half plane. Methods of Hertzian mechanics are used to calculate the response amplitude in the electrostatic regime. In the electromechanical regime, the limits of strong (classical) and weak (field-induced) indentation are established and the relative contributions of electroelastic constants are determined. These results are used to construct ''piezoresponse contrast mechanism maps'' that correlate the imaging conditions with the PFM contrast mechanisms. Conditions for quantitative PFM imaging are set forth. Variable-temperature PFM imaging of domain structures in BaTiO 3 and the temperature dependence of the piezoresponse are compared with GinzburgDevonshire theory. An approach to the simultaneous acquisition of piezoresponse and surface potential images is proposed. In order to determine the origin of image contrast in piezoresponse force microscopy ͑PFM͒, analytical descriptions of the complex interactions between a small tip and ferroelectric surface are derived for several sets of limiting conditions. Image charge calculations are used to determine potential and field distributions at the tip-surface junction between a spherical tip and an anisotropic dielectric half plane. Methods of Hertzian mechanics are used to calculate the response amplitude in the electrostatic regime. In the electromechanical regime, the limits of strong ͑classical͒ and weak ͑field-induced͒ indentation are established and the relative contributions of electroelastic constants are determined. These results are used to construct ''piezoresponse contrast mechanism maps'' that correlate the imaging conditions with the PFM contrast mechanisms. Conditions for quantitative PFM imaging are set forth. Variable-temperature PFM imaging of domain structures in BaTiO 3 and the temperature dependence of the piezoresponse are compared with Ginzburg-Devonshire theory. An approach to the simultaneous acquisition of piezoresponse and surface potential images is proposed.

show abstract

Spatial variation of ferroelectric properties in Pb(Zr0.3, Ti0.7)O3 thin films studied by atomic force microscopy

Cited by 47 publications

References 15 publications

Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

Three-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces

Contact Info

Product

Resources

About