Special Issue: Semiconductor Heterostructures (with Quantum Wells, Quantum Dots and Superlattices)

Jmerik, V. N.

doi:10.3390/nano12101685

Cited by 3 publications

(3 citation statements)

References 7 publications

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“…Semiconductor quantum wells (QWs) and superlattices (SLs) have formed the basis of fabricating many modern electronic and optoelectronic devices, including the light-emitting diodes (LEDs), laser diodes (LDs), field-effect transistors (FETs), etc. [1][2][3][4][5][6][7][8][9][10]. Compared with II-VI and III-V compounds, the epitaxial growth of C-based zinc-blende (zb) IV-IV (XC with X = Si, Ge, Sn) binary materials, alloys and heterostructures (i.e., QWs, SLs, etc.)…”

Section: Introductionmentioning

confidence: 99%

“…of higher thermal conductivity, wider electronic energy bandgaps, and higher mechanical strength have recently stimulated interest among the technologists to design different types of device structures (e.g., meta-photonic heterostructures, holographic displays, lasers, etc.) and for the scientists to evaluate their basic traits [1][2][3][4][5][6][7][8][9][10]. The progress in device engineering has Solids 2023, 4 288 demanded careful selection of the C-based wide-bandgap E g (SiC = 2.42 eV; GeC = 1.52 eV) materials which maintain physical properties both at elevated temperatures and higher radiation levels [2][3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…and for the scientists to evaluate their basic traits [1][2][3][4][5][6][7][8][9][10]. The progress in device engineering has Solids 2023, 4 288 demanded careful selection of the C-based wide-bandgap E g (SiC = 2.42 eV; GeC = 1.52 eV) materials which maintain physical properties both at elevated temperatures and higher radiation levels [2][3][4][5][6][7][8][9]. A major precondition for realizing commercial wide-bandgap heterojunction-based devices requires large-area substrates for the preparation of functional multilayer structures.…”

Section: Introductionmentioning

confidence: 99%

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Evaluating Phonon Characteristics by Varying the Layer and Interfacial Thickness in Novel Carbon-Based Strained-Layer Superlattices

Talwar,

Becla

2023

Solids

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Systematic results of lattice dynamical calculations are reported as a function of m and n for the novel (SiC)m/(GeC)n superlattices (SLs) by exploiting a modified linear-chain model and a realistic rigid-ion model (RIM). A bond polarizability method is employed to simulate the Raman intensity profiles (RIPs) for both the ideal and graded (SiC)10-Δ/(Si0.5Ge0.5C)Δ/(GeC)10-Δ/(Si0.5Ge0.5C)Δ SLs. We have adopted a virtual-crystal approximation for describing the interfacial layer thickness, Δ (≡0, 1, 2, and 3 monolayers (MLs)) by selecting equal proportions of SiC and GeC layers. Systematic variation of Δ has initiated considerable upward (downward) shifts of GeC-(SiC)-like Raman peaks in the optical phonon frequency regions. Our simulated results of RIPs in SiC/GeC SLs are agreed reasonably well with the recent analyses of Raman scattering data on graded short-period GaN/AlN SLs. Maximum changes in the calculated optical phonons (up to ±~47 cm−1) with Δ = 3, are proven effective for causing accidental degeneracies and instigating localization of atomic displacements at the transition regions of the SLs. Strong Δ-dependent enhancement of Raman intensity features in SiC/GeC are considered valuable for validating the interfacial constituents in other technologically important heterostructures. By incorporating RIM, we have also studied the phonon dispersions [ωjSLq→] of (SiC)m/(GeC)n SLs along the growth [001] as well as in-plane [100], [110] directions [i.e., perpendicular to the growth]. In the acoustic mode regions, our results of ωjSLq→ have confirmed the formation of mini-gaps at the zone center and zone edges while providing strong evidences of the anti-crossing and phonon confinements. Besides examining the angular dependence of zone-center optical modes, the results of phonon folding, confinement, and anisotropic behavior in (SiC)m/(GeC)n are compared and contrasted very well with the recent first-principles calculations of (GaN)m/(AlN)n strained layer SLs.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Evaluating Phonon Characteristics by Varying the Layer and Interfacial Thickness in Novel Carbon-Based Strained-Layer Superlattices

Talwar,

Becla

2023

Solids

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Solid state analysis of quarter pyramid c-Si/a-Si:H/µc-SiGe solar cells using 2D device characteristics

Azzahrani,

Kadhim,

Al-Ithawi

et al. 2023

J Opt

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Evaluating Interfacial Layer Thickness from Phonon Characteristics of Novel Carbon-Based Strained Superlattices

Talwar¹,

Becla²

2023

Preprint

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Systematic results of lattice dynamical calculation are reported for the novel (SiC)m/(GeC)n superlattices (SLs) by exploiting a modified-linear chain model (M-LCM) and a realistic rigid-ion- model (RIM). By employing the bond polarizability method in the framework of M-LCM, we have simulated Raman intensities for the graded (SiC)10-D/(Si0.5Ge0.5C)D/(GeC)10-D/(Si0.5Ge0.5C)D SLs by carefully integrating interfacial layer thickness D (≡ 0, 1, 2, 3 monolayers (MLs)). The variation of D has initiated considerable up (down) shifts of GeC-, (SiC)-like Raman peaks in the middle of the optical phonon frequency region. With D = 3 MLs, the maximum energy shift (by ~ 47 cm-1) of SiC-like modes has caused substantial changes in the Raman intensity profiles linked to the localization of atomic displacements at the interfacial transition regions. This effect can be considered as a vital tool for authenticating the interfacial structures in technologically important SLs. By using a RIM, we have reported SL phonon dispersions along the growth [001] as well as in the plane [100], [110] perpendicular to the growth. Our simulations of phonons in the acoustic mode region have not only confirmed the formation of minigaps at the zone center and zone edges but also provided evidence of anti-crossing and phonon confinement. Besides examining angular dependence of zone-center optical modes, we have also discussed phonon folding, confinement and anisotropic behavior in (SiC)m/(GeC)n SLs.

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Special Issue: Semiconductor Heterostructures (with Quantum Wells, Quantum Dots and Superlattices)

Cited by 3 publications

References 7 publications

Evaluating Phonon Characteristics by Varying the Layer and Interfacial Thickness in Novel Carbon-Based Strained-Layer Superlattices

Evaluating Phonon Characteristics by Varying the Layer and Interfacial Thickness in Novel Carbon-Based Strained-Layer Superlattices

Solid state analysis of quarter pyramid c-Si/a-Si:H/µc-SiGe solar cells using 2D device characteristics

Evaluating Interfacial Layer Thickness from Phonon Characteristics of Novel Carbon-Based Strained Superlattices

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