Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane

The structural-phase transformations induced by air annealing of SiOx and SiOx < Er,F > films were studied by the combined use of infrared spectroscopy and ellipsometry. The films were prepared using vacuum evaporation of SiO powder and co-evaporation of SiO and ErF3 powders. The annealing took place at moderate temperatures (750 and 1000 °C). It was found that the micro- and macrostructure of the annealed films is similar to the structure of the Si–SiOx nanocomposites obtained by annealing SiOx in vacuum or inert atmosphere and subjected to post-annealing in oxidizing atmosphere. This proves that the phase separation in the non-stoichiometric SiOx films proceeds much faster than their oxidation. The results of the work point at a possibility to simplify the annealing technology by replacing the two-step annealing with one-step in the oxygen-containing environment while maintaining the positive effects. The differences in the structure of the nanocomposites obtained by annealing the SiOx and SiOx < Er,F > films are explained by the action of Er centers as the promoters for SiOx disproportionation, as well as the enhanced action of F on the processes of disorder-to-order transition and crystallization in amorphous silicon.

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Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane

Cited by 2 publications

References 9 publications

Mechanisms of growth and the structure of the adsorption layer of water at the surface of porous silicon

Mechanisms of growth and the structure of the adsorption layer of water at the surface of porous silicon

Formation of Nanocomposites by Oxidizing Annealing of SiO x and SiO x <Er,F> Films: Ellipsometry and FTIR Analysis

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