Specific heats and enthalpies of technical solids at low temperatures :

Corruccini, R. J.; Gniewek, J.

doi:10.6028/nbs.mono.21

Cited by 44 publications

(25 citation statements)

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“…3. C=T 3 vs T for a-Si, previously published values [7] and crystalline Si [28]. [1] and (b) amorphous and crystalline Si [28].…”

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confidence: 78%

“…A recent picosecond ultrasonic measurement [27] of v L in our film gave v L 7:51 0:30 10 5 cm=s which is also within error bars of the theoretical value. Figure 3 compares C=T 3 vs T (in J=g K 4 ) of our a-Si (open circles) to data on a 35 m thick sputtered a-Si film from Mertig et al [7] and values for crystalline Si [28]. The dashed lines show the Debye specific heat function, C D =T 3 , for D 625 K and D 487 K (this curve is shown below 20 K, though above 70 K, C=T 3 is again within error bars of the Debye function).…”

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confidence: 92%

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Thermal Conductivity and Specific Heat of Thin-Film Amorphous Silicon

2006

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We report the thermal conductivity and specific heat of amorphous silicon thin films measured from 5-300 K using silicon-nitride membrane-based microcalorimeters. Above 50 K the thermal conductivity of thin-film amorphous silicon agrees with values previously reported by other authors. However, our data show no plateau, with a low T suppression of the thermal conductivity that suggests that the scattering of long wavelength, low Q vibrations goes as Q2. The specific heat shows Debye-like behavior below 15 K, with theta(D) = 487 +/- 5 K, and is consistent with a very small contribution of tunneling states in amorphous silicon. Above 15 K, the specific heat deviates less from Debye behavior than does its crystalline allotrope, indicating no significant excess modes (boson peak) in amorphous silicon.

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“…3. C=T 3 vs T for a-Si, previously published values [7] and crystalline Si [28]. [1] and (b) amorphous and crystalline Si [28].…”

mentioning

confidence: 78%

mentioning

confidence: 92%

Thermal Conductivity and Specific Heat of Thin-Film Amorphous Silicon

2006

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“…Since the crystal structures and elasticity modules and, thus, the phonon spectra are rather different, one cannot a priori exclude changes in the order of electronic energies. We therefore extrapolated the difference in Gibbs energies to zero temperature; the standard experimental data (NIST) of entropy and heat capacities for graphite (see Appendix A) 16 are fit to the Debye-Sommerfeld model, C p = gT + aT 3 . For diamond, this yields g = 0 (nonmetallic and no other degrees of freedom yielding a linear term) but graphite features so called flexural vibrations ( Fig.…”

Section: Experimental Situationmentioning

confidence: 99%

“…To arrive at the zero-temperature relative energy, the integral needs to be evaluated. This was done 16 using experimental heat capacities of diamond and graphite, extrapolated to the zero temperature by the Debye-Sommerfeld relation: C p = gT + aT 3 . The difference of zero temperature enthalpies D DG H 0 0 obtained by this procedure amounts to 1.39-1.42 kJ mol À1 .…”

Section: Theoretical Appendixmentioning

confidence: 99%

Relative stability of diamond and graphite as seen through bonds and hybridizations

Popov

Görne

Tchougréeff

et al. 2019

Phys. Chem. Chem. Phys.

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“…The following references are cited in the supporting information for this article: Childs et al (1973), Corruccini & Gniewek (1960), Ehrlich et al 2015, Feistel & Wagner (2006) and Loerting et al (2011).…”

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confidence: 99%

Hypothesis for a mechanism of beam-induced motion in cryo-electron microscopy

Thorne

2020

Int Union Crystallogr J

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Estimates of heat-transfer rates during plunge-cooling and the patterns of ice observed in cryo-EM samples indicate that the grid bars cool much more slowly than do the support foil and sample near the middle of the grid openings. The resulting transient temperature differences generate transient tensile stresses in the support foil. Most of this foil stress develops while the sample is liquid and cooling toward its glass transition T g, and so does not generate tensile sample stress. As the grid bars continue cooling towards the cryogen temperature and contracting, the tensile stress in the foil is released, placing the sample in compressive stress. Radiation-induced creep in the presence of this compressive stress should generate a doming of the sample in the foil openings, as is observed experimentally. Crude estimates of the magnitude of the doming that may be generated by this mechanism are consistent with observation. Several approaches to reducing beam-induced motion are discussed.

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Specific heats and enthalpies of technical solids at low temperatures :

Abstract: Tables are given of the

Cited by 44 publications

References 2 publications

Thermal Conductivity and Specific Heat of Thin-Film Amorphous Silicon

Thermal Conductivity and Specific Heat of Thin-Film Amorphous Silicon

Relative stability of diamond and graphite as seen through bonds and hybridizations

Hypothesis for a mechanism of beam-induced motion in cryo-electron microscopy

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