Spectral losses of low-OH-content optical fibres

Horiguchi, M.; Osanai, Hiroshi

doi:10.1049/el:19760239

Cited by 283 publications

(17 citation statements)

References 7 publications

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“…Considerations associated with the magnitude of Rayleigh scattering in glass played a central role in the earliest days of the development of optical fiber for long‐haul communications. It was well‐appreciated that the minimum loss of optical fiber was dependent on Rayleigh scattering and so compositions that reduced its magnitude were an active topic of study . However, as students of the history of optical fiber know, while multicomponent glasses possessing intrinsically low Rayleigh scattering (ie, lower Rayleigh scattering than silica) have been synthesized and studied, extrinsic impurities ultimately defined practical attenuation limits of optical fibers.…”

Section: Thermodynamics Of Optical Scattering and Impact On Optical Nmentioning

confidence: 99%

A unified materials approach to mitigating optical nonlinearities in optical fiber. I. Thermodynamics of optical scattering

Ballato

Cavillon

Dragic

2017

Int J of Appl Glass Sci

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Sustained progress in the development of optical fibers has led to the present state where further improvements in performance are limited by intrinsic optical nonlinearities. In order to circumvent such limitations, the user community has adopted two general approaches: (i) engineer the enabled systems accordingly; and/or (ii) microstructure the fiber to shift nonlinear thresholds to high optical power levels. In both cases, the nonlinearities are accepted as they are and performance is enhanced through added system or fiber design complexity. This paper, the first in a trilogy, along with two companion articles (in 3 parts) (Int J Appl Glass Sci.

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Section: Thermodynamics Of Optical Scattering and Impact On Optical Nmentioning

confidence: 99%

A unified materials approach to mitigating optical nonlinearities in optical fiber. I. Thermodynamics of optical scattering

Ballato

Cavillon

Dragic

2017

Int J of Appl Glass Sci

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“…The wavelength region 1-2 mm [1-3] is very useful for optoelectronic devices particularly for optical communication because of the presence of minimum loss at 1.5 mm [4,5] and minimum dispersion at 1.3 mm [6] in optical fiber. The spectral region 2-4 mm is drawing considerable attention because of recent development of low loss fluoride glass fibers in this spectral region and l = 800 nm is useful for communication, entertainment and medical applications.…”

Section: Introductionmentioning

confidence: 99%

On the material parameters of some useful quaternary compounds relevant to optoelectronic device design

Samanta

Chandra²

2010

Indian J Phys

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Studies of some quaternary compounds showing lattice matching condition on various substrates suitable for device design in various wavelength regions have been reported here. The compositional dependence of lowest energy band gap, dielectric constant, coefficient of thermal expansion, temperature and pressure dependence of lowest band gap energy, etc. of these compounds have been presented and finally proper concentrations suitable for device design under lattice matching condition have been mentioned.

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“…4 Some of these devices are used in optical fiber communication systems as emitters operating in the 1.1-1.6 m range, a spectral range in which the optical fibers exhibit the lowest material dispersion 5 and attenuation. 6 As GaInAsP is believed to have better surface properties than InP, it is also considered a better candidate for metal-insulator-semiconductor fieldeffect transistors ͑MISFETs͒. 7 The performance of these devices can be drastically limited because of a poor and reactive surface with a high surface state density.…”

Section: Introductionmentioning

confidence: 99%

Oxidation and sulfur passivation of GaInAsP(100)

Rajesh

Huang

Lau

et al. 1997

Journal of Applied Physics

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Articles you may be interested inEffect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface Appl. Phys. Lett. 99, 232103 (2011); 10.1063/1.3664778 Initiation of a passivated interface between hafnium oxide and In ( Ga ) As ( 0 0 1 ) − ( 4 × 2 )The quaternary III-V compound semiconductor GaInAsP is an important material for many optoelectronic devices, the surface of which generally needs to be passivated in the fabrication of such devices. Thus understanding the surface chemistry and monitoring the surface band gap states after oxidation and sulphur passivation have become necessary. Further, understanding the effect of ion bombardment on the GaInAsP surface during dielectric deposition is also of importance for device fabrication. In this study, quaternary GaInAsP͑100͒ surfaces were subjected to UV/ozone and wet chemical treatments, dilute HF etching, sulfur passivation, and Ar ion bombardment. The composition and the relative movement of the surface Fermi level (E Fs ) of the surfaces were measured by x-ray photoemission spectroscopy ͑XPS͒ after oxidation, HF etching, sulfur passivation, and ion bombardment of surfaces. It was found that oxidation by ozone exposure formed multiple oxide phases of all the constituent elements. Both HF etching and sulfur passivation treatments were effective in generating surfaces having almost no oxide. It was also found that while sulfur passivation combined with an ultrahigh vacuum annealing at 300°C reduced the surface band bending on n-type GaInAsP͑100͒, it inverted p-type GaInAsP to n-type. An L-edge absorption spectrum of the sulfur passivated surface confirmed the presence of a sulfur layer. Further, it was found that an Ar ϩ ion bombardment pins the E Fs near the midgap for both n-and p-type GaInAsP surfaces.

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Spectral losses of low-OH-content optical fibres

Cited by 283 publications

References 7 publications

A unified materials approach to mitigating optical nonlinearities in optical fiber. I. Thermodynamics of optical scattering

A unified materials approach to mitigating optical nonlinearities in optical fiber. I. Thermodynamics of optical scattering

On the material parameters of some useful quaternary compounds relevant to optoelectronic device design

Oxidation and sulfur passivation of GaInAsP(100)

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