Spectral response of a gamma and electron irradiated pin photodiode

Onoda, Shinobu; Hirao, Toshio; Laird, J.S.; Mori, Hidenobu; Okamoto, Ikuo; Itoh, Hisayoshi

doi:10.1109/tns.2002.1039681

Cited by 25 publications

(7 citation statements)

References 10 publications

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“…No such degradation was noted in the neutron results leading to the conclusion that surface damage in passivation leads to a decrease in quantum efficiency due to the incorporation of color centers. Indeed, Onoda et al also observed similar tendencies in Si --structures irradiation with -rays and MeV electrons [39]. However, contrary to the findings of Kirn et al passivation in some CCD imagers appears to be reliable up to kGy [40].…”

Section: Time-resolved Gain Fluence Dependencementioning

confidence: 88%

Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode

Laird

Onoda

Hirao

et al. 2006

IEEE Trans. Nucl. Sci.

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Effects of displacement and ionization damage on the impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode was investigated using a picosecond laser system. Damage was generated using either Co 60 -irradiation or by scanning the device with an MeV ion microbeam. No shift in the impulse response characteristics and gain was observed for gamma doses as high as 100 kGy(Si). However, dark current measurements for irradiations with biases close to typical operating levels, exhibited enhanced ionization damage orders of magnitude higher than for no bias. Displacement damage introduced by the microbeam was used to differentiate between ionization damage in the guard ring isolation oxide and bulk damage. The absence of any marked change in the impulse response is discussed, as are possible mechanisms for the enhanced ionization damage.

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Section: Time-resolved Gain Fluence Dependencementioning

confidence: 88%

Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode

Laird

Onoda

Hirao

et al. 2006

IEEE Trans. Nucl. Sci.

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“…where r is the reflection coefficient, Previous reports in literature have stated that is independent of dose for 1 MeV electron irradiations up to 5×1015 cm-2 [13]. η is the quantum efficiency, P 0 is the incident light intensity, h is the Planck constant, ν is the photon frequency, α is the absorption coefficient and x is the depth variable.…”

Section: Physical Modeling Basicsmentioning

confidence: 99%

Speed Response and Performance Degradation of High Temperature Gamma Irradiated Silicon PIN Photodiodes

El-Naser¹,

Mohamed²,

Ayad³

et al. 2012

adv sci lett

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In the present paper, we have been investigated deeply and parametrically the speed response of Si PIN photodiodes employed in high temperature-irradiated environment. The radiation-induced photodiodes defects can modify the initial doping concentrations, creating generation-recombination centres and introducing trapping of carriers. Additionally, rate of the lattice defects is thermally activated and reduces for increasing irradiation temperature as a result of annealing of the damage. Nonlinear relations are correlated to investigate the current-voltage and capacitance-voltage dependences of the Si PIN photodiodes, where thermal and gamma irradiation effects are considered over the practical ranges of interest. Both the ambient temperature and the irradiation dose possess sever effects on the electro-optical characteristics and consequently the photo-response time and SNR of Si PIN photodiodes. In this paper, we derive the transient response of a Si PIN photodiode for photogeneration currents, when it is exposed to gamma radiation at high temperature. An exact model is obtained, which may be used to optimize the responsivity and speed of these irradiated devices over wide range of the affecting parameters.

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“…The trapped holes in the layer hinder charge collection, and finally make signal loss in the sensor system [1]. On the other hand, the dislocations produced in the photosensor part degrades the minority carrier diffusion length in the base region [2]. Others have explained that the irradiation of the bird's beak oxide near the junction increases the recombination velocity and this leads to decrease the sensitivity of the sensor.…”

Section: Direct Interaction On Cmos Aps Array Imagermentioning

confidence: 99%

Industrial X-ray imaging based on scintillators and CMOS APS array: direct X-ray irradiation effects

Kim

Jeon

Kim

et al. 2005

Nuclear Instruments and Methods in Physics Research Section A:

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Spectral response of a gamma and electron irradiated pin photodiode

Cited by 25 publications

References 10 publications

Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode

Effects of Gamma and Heavy Ion Damage on the Impulse Response and Pulsed Gain of a Low Breakdown Voltage Si Avalanche Photodiode

Speed Response and Performance Degradation of High Temperature Gamma Irradiated Silicon PIN Photodiodes

Industrial X-ray imaging based on scintillators and CMOS APS array: direct X-ray irradiation effects

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