Speed Response and Performance Degradation of High Temperature Gamma Irradiated Silicon PIN Photodiodes

Abstract

In the present paper, we have been investigated deeply and parametrically the speed response of Si PIN photodiodes employed in high temperature-irradiated environment. The radiation-induced photodiodes defects can modify the initial doping concentrations, creating generation-recombination centres and introducing trapping of carriers. Additionally, rate of the lattice defects is thermally activated and reduces for increasing irradiation temperature as a result of annealing of the damage. Nonlinear relations are correlated to investigate the current-voltage and capacitance-voltage dependences of the Si PIN photodiodes, where thermal and gamma irradiation effects are considered over the practical ranges of interest. Both the ambient temperature and the irradiation dose possess sever effects on the electro-optical characteristics and consequently the photo-response time and SNR of Si PIN photodiodes. In this paper, we derive the transient response of a Si PIN photodiode for photogeneration currents, when it is exposed to gamma radiation at high temperature. An exact model is obtained, which may be used to optimize the responsivity and speed of these irradiated devices over wide range of the affecting parameters.

Proton radiation damage effects on the response of high speed communication avalanche photodiodes (notice of removal)

“…c and β are constant that are calculated in Ref. 19. In order to analyze the response time of irradiated photodiode, assume a modulated photon flux density as:…”

“…Value of α is depend on radiation fluence. 19 The time constant t RC of the photodiode with a load resistance R L is given by:…”

“…Proton radiation has the two types of defects on APD's which include ionization and primarily displacement damage such as vacancies and interstitials. 19 Gamma rays were believed to cause the same amount of ionization damage as protons of the same dose but very little displacement damage. 19,20 Neutrons cause only displacement damages.…”

Optical fibre communication cables systems performance under harmful gamma irradiation and thermal environment effects

“…The refractive index of different materials based fibre cable system can be expressed as a function of temperature T, operating optical signal wavelength λ and irradiation dose of gamma rays φ as the following formula [11,12]…”

Effect of Gamma Radiation on Structural and Optical Properties of ZnO and Mg-Doped ZnO Films Paired with Monte Carlo Simulation

“…As gamma ray interacts with materials, generation of defects is inevitable due to its ionizing properties, which in turn causes the ejections of electrons. In addition, atomic displacement, which in turn induces primary knock-on atoms (PKA) due to irradiation, causes atomic lattice defects [6]. Based on past studies, the displacement energies for oxygen and metal of ZnO are both 57 eV.…”