Spectral response of amorphous–nano-crystalline silicon thin films

Gracin, Davor; Gajović, Andreja; Juraić, Krunoslav; Čeh, Miran; Remeš, Z.; Poruba, A.; Vaněček, M.

doi:10.1016/j.jnoncrysol.2007.10.076

Cited by 23 publications

(6 citation statements)

References 22 publications

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“…The Raman spectrum of the annealed sample exhibits a sharp crystalline peak near 519 cm −1 superposing on a broad but asymmetric band and a small peak appearing at around 970 cm −1 . The former is the characteristic of nanocrystalline Si [9,26], while the latter is the second order of Raman scattering from nanocrystalline Si. The Raman spectrum of the passivated Si-NCs/SiO 2 exhibits nearly the same Raman features with those of the unpassivated ones, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence enhancement of Si nanocrystals embedded in SiO2 by thermal annealing in air

Li¹,

Liang²,

Hu³

et al. 2014

Applied Surface Science

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Section: Resultsmentioning

confidence: 99%

Photoluminescence enhancement of Si nanocrystals embedded in SiO2 by thermal annealing in air

Li¹,

Liang²,

Hu³

et al. 2014

Applied Surface Science

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“…At higher dilutions, the TO peak belonging to crystalline Si appears at ∼ 520 cm . A new deconvolution model [6] considering two crystalline peaks attributed to the contribution of small (at ∼ 505 -510 cm ) and large crystalline grains (closer to 520 cm −1 ) has been applied upon the Raman spectra and the presence of small and large crystalline grains has been detected (Tab. 1).…”

Section: Resultsmentioning

confidence: 99%

“…Relatively well-understood amorphous Si:H (a-Si:H) and microcrystalline Si:H (µc-Si:H) thin films are still intensively studied. Many studies demonstrate an important role of hydrogen in the formation of a-Si:H and µc-Si:H network [4][5][6]. It is known that hy-drogen assists in improving medium-range order [4,7] and crystallisation.…”

Section: Introductionmentioning

confidence: 99%

Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects

2009

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Abstract:We report results obtained from measurements of optical transmittance spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (µc-Si:H). Spectral refractive indices and absorption coefficients were determined from transmittance spectra. The spectral absorption coefficients were used to determine the Tauc optical band gap energy, the B factor of the Tauc plots, E 04 (energy at which the absorption coefficient is equal to 10 4 cm −1 ), and the Urbach energy as a function of the hydrogen dilution. The results were correlated with microstructure, namely volume fractions of the amorphous and crystalline phase with voids, and with the grain size.

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“…The thickness of the films estimated from E-MRS June 08 transmittance measurements were in the range 200 -500 nm while the crystalline to amorphous volume ratio varied from 10 to some 40 %. The crystallinity was estimated as the ratio between corresponding areas of amorphous and crystalline TO phonon peaks in Raman spectra [3].…”

Section: Methodsmentioning

confidence: 99%

“…The optical, electrical and vibrational properties of QD in such films are not yet fully explained, among others due to the substantial influence of matrix effects. The high influence of the close neighborhood comes due to the small dimensions of the QD which results in a large surface-to-volume ratio [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

GISAXS and GIWAXS analysis of amorphous–nanocrystalline silicon thin films

Juraić¹,

Gracin²,

Šantić³

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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Amorphous-nanocrystalline silicon thin films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) on glass substrate with various silicon nanocrystal size distributions and volume fractions. The samples were examined by Grazing Incidence Small Angle X-ray Scattering (GISAXS) and Grazing Incidence Wide Angle X-ray Scattering (GIWAXS) at the Austrian SAXS beamline (Synchrotron Elettra, Trieste) using an X-ray beam energy of 8 keV. The grazing incidence angle varied from the critical angle to 0.2 deg. above the critical angle. This allowed the examination of the samples at different depths, and the distinction of the surface scattering contribution from the particles scattering in the bulk. The sizes of the "particles" obtained from the horizontal and vertical sections of 2D GISAXS patterns were between 2 and 6 nanometers. Since GISAXS is sensitive to electron density differences (contrast) between the scattering bodies and the surrounding matrix, it is not evident whether the particles are nanocrystals or just voids embedded in amorphous matrix. However, the size of the crystals calculated from the line-shape analysis of peaks in GIWAXS spectra and the crystal size distribution obtained from High-Resolution Transmission Electron Microscopy (HRTEM) images agree well with the size of "particles" estimated from GISAXS, strongly indicating that the observed particles are silicon nanocrystals. E-MRSJune 08

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Spectral response of amorphous–nano-crystalline silicon thin films

Cited by 23 publications

References 22 publications

Photoluminescence enhancement of Si nanocrystals embedded in SiO2 by thermal annealing in air

Photoluminescence enhancement of Si nanocrystals embedded in SiO2 by thermal annealing in air

Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects

GISAXS and GIWAXS analysis of amorphous–nanocrystalline silicon thin films

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