Spectral response self-calibration and interpolation of silicon photodiodes

Geist, Jon; Zalewski, Edward F.; Schaefer, A. R.

doi:10.1364/ao.19.003795

Cited by 120 publications

(54 citation statements)

References 7 publications

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“…The photocharge generation efficiency is a material property and depends on the magnitude and type of the material band gap relative to the energy level of the incident photons. The collection efficiency depends on the device structure and material quality and can be maxi-72 mized in a p-n junction by using: a proper doping profile, high-quality crystalline silicon and reverse biasing [7][8][9]. These issues are discussed in Section 1.3.2.1.…”

Section: Spectral Response In a Silicon Photodiodementioning

confidence: 99%

Silicon Photodetectors with a Selective Spectral Response

Wolffenbuttel

2001

Sensors Update

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Silicon photodetectors with a spectral response defined by design are described. Micromachining technologies in general and two properties of an integrated silicon photodetector in particular are used for that purpose. Firstly, the wavelength dependence of the absorption coefficient is exploited. Secondly, use is made of the fact that a multi-layer interference filter on top of a pn-junction comes with silicon wafer processing.The silicon complex index of refraction, n Ã n À jk, is wavelength dependent in the visible part of the spectrum due to the indirect bandgap at 1.12 eV and the possibility for a direct transition at 3.4 eV, which causes the material to strongly absorb UV light and to almost behave like a transparent material for wavelengths beyond 800 nm. This mechanism enables the design of color sensors and photodiodes with an IR or UV selective response.The transmission of incident light through a surface stack of thin films into the bulk silicon is wavelength dependent. The required compatibility with standard microelectronic processing in silicon limits the range of suitable materials to the silicon-compatible materials conventionally used for integrated circuit fabrication. Accurate data on: crystalline Si, thermally grown SiO 2 , LPCVD polysilicon, silicon nitride (lowstress and stoichiometric) and oxides (LTO, PSG, BSG, BPSG), PECVD oxynitrides and thin-film metals are provided to improve the predictive quality of simulations.In case of a complete microspectrometer, micromachining steps are usually applied for the realization of a dispersion element. Devices operating in the visible or IR spectral range and based on a grating or a Fabry-Perot etalon are presented.

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Section: Spectral Response In a Silicon Photodiodementioning

confidence: 99%

Silicon Photodetectors with a Selective Spectral Response

Wolffenbuttel

2001

Sensors Update

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“…2 The test QED 100 photodiode has an estimated precision of ±0.063 percent for a reverse bias of 9 V and ± 0.056 percent for a reverse bias of 18 V. 3 When the test QED 100 is compared to calorimeter C4-2, Figs. 3 and 4 show results within the instrument uncertainties.…”

Section: Resultsmentioning

confidence: 99%

“…At high-power levels and/or long wavelengths, l Ou-percent quantum efficiency is achieved by the application of a reverse-bias voltage to either offset the forward-bias current (high power) or increase the depth of the depletion region (long wavelength). Further explanation may be found in [2]. The light-trapping arrangement places the first three inversion-layer silicon photodiodes at 45 0 to the incident radiation, causing the radiation reflected from the first photodiode to be incident on the second and the radiation reflected from the second photodiode to be incident on the third.…”

Section: Introductionmentioning

confidence: 99%

Laser power measurement standards: A comparison of two scales

Faaland

Naiman

1987

IEEE Trans. Instrum. Meas.

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A scale intercomparison between a C-series calorimeter and a commercially available, virtually 100-percent quantum-efficient photodiode device has been undertaken." The intercomparison has been performed at the helium-neon laser wavelength (632.8 nm) with power levels incident on the photodiode device ranging from 4 JlW to 1.4 mW. Results obtained when the photodiode device was reverse biased with 9 and 18 V indicate that the scales of the photodiode device and the Cseries calorimeter are linearly related with an average correction factor of 1.0047 and 1.0037, respectively. 2 6 5 4 3 7

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“…If it is assumed that the change in reflectance is related just to a thickness change of the silicon oxide passivation layer [5,7,11] , an increase of about 2 nm over 30 nm would be needed approximately, to explain such a change. This type of change in the silicon oxide layer has not been referred in the literature (to the knowledge of the authors) and it is not likely to be produced since the detectors have been always kept at room temperature in dry environments.…”

Section: Fig5 Difference Between Previous Spectral Reflectance Valuementioning

confidence: 99%

Differences of silicon photodiode spectral reflectance among the same batch

Zurita

Acosta²,

Aglio³

et al. 2008

Optoelectron. Lett.

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Photodiode's reflectance plays an important role regarding the relation between responsivity and the incident flux. In this work we analyze how the spectral reflectance changes among photodiodes from the same manufacturer and batch and how the reflectance of three standard photodiodes has drifted during six years. The results show that the reflectance changes from diode to diode within the same batch and also show that the reflectance of photodiodes changes on time. This ageing is spectrally dependent.Silicon photodiodes are more sensitive and quicker than thermal detectors. For these reasons silicon photodiodes are used to maintain scales of spectral responsivity in the spectral range (300 nm -1000 nm) in many National Laboratories [1][2][3][4][5] .The spectral responsivity of a photodiode depends on the reflectance and the internal quantum efficiency, so a good approach to determine responsivity is to know both reflectance and internal quantum efficiency. Because of that, in this work we present a study about the reflectance of silicon photodiodes, with two goals: to study the variability of reflectance among photodiodes from a single batch, and to study the reflectance aging of some silicon photodiodes used as standards during six years. In some radiometric applications, the reflectance of individual photodiodes plays an important role because they have to match to a pair or be minimized or maximized, as it is the case for silicon trap radiometers [6,7] . The ageing of silicon photodiodes has been studied by several authors and all of them looked at the stability of the internal quantum efficiency [8,9] rather than at the reflectance.

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Spectral response self-calibration and interpolation of silicon photodiodes

Cited by 120 publications

References 7 publications

Silicon Photodetectors with a Selective Spectral Response

Silicon Photodetectors with a Selective Spectral Response

Laser power measurement standards: A comparison of two scales

Differences of silicon photodiode spectral reflectance among the same batch

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