Spectroscopic ellipsometry study of ion-implanted Si(100) wafers

Abstract

Optical properties of P+ ion-implanted Si(100) wafers have been studied using spectroscopic ellipsometry (SE). The P+ ions are implanted at 150 keV with fluences ranging from 1×1014 to 2×1015 cm−2 at room temperature. An effective-medium-approximation analysis suggests that the ion-implanted layer can be explained by a physical mixture of microcrystalline and amorphous silicon. The ε(E) spectrum of the microcrystalline component is found to differ appreciably from that of single-crystalline silicon, especially in the vicinity of the sharp critical-point features. This difference in ε(E) can be successfully interpreted by increasing the broadening parameter at each critical point. Considering these and previous data, we obtain an expression, A=(5.13×1011/EacM)1.872, which enables us to estimate the amorphization-threshold fluence A for silicon implanted with optional ion species of mass number M at energy Eac in keV. No clear change in the original structure of silicon surface after P+ ion implantation has been observed by atomic force microscopy. SE has been proven to be an easy, fast, and nondestructive technique which can be used to assess important ion-implantation parameters.

Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

“…[28][29][30][31] It has been observed that low fluences of different ion implantations have no significant/ noticeable effect on the surface roughness. [28][29][30]32 On the other hand, high fluences of ion implantations have been found to increase the surface roughness 29,31 due to the severe damage caused by ion irradiation. As shown in Fig.…”

Characterization of Nanocrystals Using Spectroscopic Ellipsometry

“…A special parameterization has been developed by S. Adachi. This model dielectric function describes each critical point with a specific analytical equation depending on the type of the critical point [1,26]. As a result, one has a set of Kramers-Kroenig-consistent analytical equations, with each equation describing an oscillator.…”

Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage

“…In the past few decades the spectroscopic ellipsometry was extensively used to investigate ion implantation (Si + , Ge + , B + , P + , As + , Ar + , Xe + , and N 2 + ) of crystalline and polycrystalline silicon (Ibrahim & Bashara, 1972;Adams & Bashara, 1975;Adams, 1976;Jellison et al, 1981;Ohira & Itakura, 1982;Lohner et al, 1983;Vasquez et al, 1985;Vedam et al, 1985;Nguyen & Vedam, 1990;Miyazaki & Adachi, 1993;Fried et al, 1992Fried et al, , 2004Müller-Jahreis et al, 1995;Shibata et al, 1999Shibata et al, , 2010Giri et al, 2001;Tsunoda et al, 2002;Petrik et al, 2003;Yoshida et al, 2005;Stevens et al, 2006;Lioudakis et al, 2006aLioudakis et al, , 2006bPetrik, 2008;Matsuda et al, 2010;Mohacsi et al, 2011). One of the motivations of that was to get non-contact, non-destructive and rapid measurement technique with high accuracy and sensitivity for industrial applications (in particular, for integrated circuits (IC) manufacturing).…”