Specular spectroscopic scatterometry

Niu, Xinhui; Jakatdar, Nickhil H.; Bao, Junwei Lucas; Spanos, Costas J.

doi:10.1109/66.920722

Cited by 131 publications

(16 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1,2 Since the year of around 2000, spectroscopic ellipsometry was introduced to monitor critical dimension of grating structures in semiconductor manufacturing. 3,4 Compared with scanning electron microscopy (SEM) and atomic force microscopy (AFM), this technique, also referred to as optical scatterometry or optical critical dimension metrology, has achieved wide industrial applications after decades of development due to its attractive advantages, such as low cost, high throughput, and minimal sample damage. Among the various types of ellipsometers, Mueller matrix ellipsometer (MME), also known as Mueller matrix polarimeter, can provide all 16 elements of a 4 × 4 Mueller matrix.…”

Section: Introductionmentioning

confidence: 99%

Development of a spectroscopic Mueller matrix imaging ellipsometer for nanostructure metrology

Chen

Yuan

et al. 2016

Review of Scientific Instruments

View full text Add to dashboard Cite

In this paper, we describe the development of a spectroscopic Mueller matrix imaging ellipsometer (MMIE), which combines the great power of Mueller matrix ellipsometry with the high spatial resolution of optical microscopy. A dual rotating-compensator configuration is adopted to collect the full 4 × 4 imaging Mueller matrix in a single measurement. The light wavelengths are scanned in the range of 400-700 nm by a monochromator. The instrument has measurement accuracy and precision better than 0.01 for all the Mueller matrix elements in both the whole image and the whole spectral range. The instrument was then applied for the measurement of nanostructures combined with an inverse diffraction problem solving technique. The experiment performed on a photoresist grating sample has demonstrated the great potential of MMIE for accurate grating reconstruction from spectral data collected by a single pixel of the camera and for efficient quantification of geometrical profile of the grating structure over a large area with pixel resolution. It is expected that MMIE will be a powerful tool for nanostructure metrology in future high-volume nanomanufacturing.

show abstract

Section: Introductionmentioning

confidence: 99%

Development of a spectroscopic Mueller matrix imaging ellipsometer for nanostructure metrology

Chen

Yuan

et al. 2016

Review of Scientific Instruments

View full text Add to dashboard Cite

show abstract

“…Nowadays, the critical dimension (CD) in integrated circuits is shrinking to 45 nm and even lower, accompanying with tremendous challenges of nanometrology. 1 The optical critical dimension (OCD) metrology, also called scatterometry, [2][3][4] is one of the well-known optical techniques that has gained considerable interest in the industrial environment because it is fast, noncontact, nondestructive, and of lowcost, compared to other techniques such as scanning electron microscopy (SEM) and atomic force microscopy (AFM). 5,6 The success of OCD metrology relies heavily on accurate forward modeling of sub-wavelength structures and fast extraction of structural parameters.…”

Section: Introductionmentioning

confidence: 99%

“…[7][8][9][10] Then in the inverse problem, the measured optical parameters are obtained and utilized to fit the simulation parameters using some library search methods or nonlinear regression algorithms. 2,11,12 The forward modeling is repeated until the required accuracy is acquired and the structural parameters are measured to provide the best fit. Because this process takes time, it is highly desirable to improve the speed of optical modeling to achieve the greatest efficiency in OCD metrology.…”

Section: Introductionmentioning

confidence: 99%

Estimation of the convergence order of rigorous coupled-wave analysis for binary gratings in optical critical dimension metrology

Liu

Chen

et al. 2012

Opt. Eng

View full text Add to dashboard Cite

In most cases of optical critical dimension metrology, when applying rigorous coupled-wave analysis to optical modeling, a high order of Fourier harmonics is usually set up to guarantee the convergence of the final results. However, the total number of floating point operations grows dramatically as the truncation order increases. Therefore, it is critical to choose an appropriate order to obtain high computational efficiency without losing much accuracy in the meantime. We show that the convergence order associated with the structural and optical parameters is estimated through simulation. The results indicate that the convergence order is linear with the period of the sample when fixing the other parameters, both for planar diffraction and conical diffraction. The illuminated wavelength also affects the convergence of a final result. With further investigations concentrated on the ratio of illuminated wavelength to period, it is discovered that the convergence order decreases with the growth of the ratio, and when the ratio is fixed, convergence order jumps slightly, especially in a specific range of wavelength. This characteristic could be applied to estimate the optimum convergence order of given samples to obtain high computational efficiency.

show abstract

“…5,6 Instead of a blank substrate, SE spectra of a subwavelength silica grating are analyzed and the silica etch rates are deduced by tracing the changes in the nano-grating line shape. 5,6 Instead of a blank substrate, SE spectra of a subwavelength silica grating are analyzed and the silica etch rates are deduced by tracing the changes in the nano-grating line shape.…”

Section: Introductionmentioning

confidence: 99%

Study of silica nano-pattern erosion in H2SO4-H2O2 mixture using spectroscopic ellipsometry

Kurataka

Tran

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

Specular spectroscopic scatterometry

Cited by 131 publications

References 25 publications

Development of a spectroscopic Mueller matrix imaging ellipsometer for nanostructure metrology

Development of a spectroscopic Mueller matrix imaging ellipsometer for nanostructure metrology

Estimation of the convergence order of rigorous coupled-wave analysis for binary gratings in optical critical dimension metrology

Study of silica nano-pattern erosion in H2SO4-H2O2 mixture using spectroscopic ellipsometry

Contact Info

Product

Resources

About