2005
DOI: 10.1107/s090904950501472x
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Spherically bent analyzers for resonant inelastic X-ray scattering with intrinsic resolution below 200 meV

Abstract: Resonant inelastic X-ray scattering with very high energy resolution is a promising technique for investigating the electronic structure of strongly correlated materials. The demands for this technique are analyzers which deliver an energy resolution of the order of 200 meV full width at half-maximum or below, at energies corresponding to the K-edges of transition metals (Cu, Ni, Co etc.). To date, high resolution under these conditions has been achieved only with diced Ge analyzers working at the Cu K-edge. H… Show more

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Cited by 38 publications
(47 citation statements)
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“…We have developed a simple, inexpensive and fast method for producing larger graphene samples, and two dimensional samples of layered materials in general. This method is inspired from a technique used for bonding Si to a Pyrex substrate, known as anodic bonding 6,7 . By applying a potential difference of the order of a kV to a heated Pyrex/Si interface very intimate contact is obtained between the substrate and silicon which translates into the formation of chemical bonds at the interface.…”
mentioning
confidence: 99%
“…We have developed a simple, inexpensive and fast method for producing larger graphene samples, and two dimensional samples of layered materials in general. This method is inspired from a technique used for bonding Si to a Pyrex substrate, known as anodic bonding 6,7 . By applying a potential difference of the order of a kV to a heated Pyrex/Si interface very intimate contact is obtained between the substrate and silicon which translates into the formation of chemical bonds at the interface.…”
mentioning
confidence: 99%
“…The undesirable glue thickness effect mentioned before can be virtually prevented by applying an anodic bonding method like the one described by Collart [2] and Verbeni [10]. In our group, a voltage of 800 V is applied to the Si wafer (+) and a special glass (pyrex) base (−) while glass and wafer are heated to high temperature (450°C) and annealed for a certain time, at the same time pressed together by a stainless steel die (cf.…”
Section: Anodic Bondingmentioning
confidence: 98%
“…RIXS and high-resolution emission spectroscopy would greatly benefit from spectrometers with resolutions better than 300 meV at the K edges of 3d metals. 18 It was recently suggested 20 that in nonresonant inelastic x-ray scattering applications and when the Bragg angle is close to 90°, the contribution of the finite cube size to the resolution function is not inevitable. Instead, it can be overcome by using position-sensitive detectors to record not only the number but also the position of photons within the focus of a diced analyzer crystal.…”
Section: Introductionmentioning
confidence: 99%
“…͑1͒ would be at least 500 meV, and much higher energy resolution is often desirable. Thus large efforts have been made to produce bent analyzer crystals with a high resolving power, 18 providing bandwidths down to 300 meV. The only RIXS setup based on a diced analyzer crystal has been used at the Cu K edge, based on the Ge͑733͒ reflection 19 at a Bragg angle of 87.4°, the only close-tobackscattering geometry available for K edges of 3d metals with Si or Ge crystals.…”
Section: Introductionmentioning
confidence: 99%