Spin negative differential resistance and high spin filtering behavior realized by devices based on graphene nanoribbons and graphitic carbon nitrides

Kong, Xiangru; Cui, Bin; Zhao, Wenkai; Zhao, Jianjun; Li, Dongmei; Liu, Desheng

doi:10.1016/j.orgel.2014.10.016

Cited by 22 publications

(13 citation statements)

References 36 publications

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“…The sections which follow show that under the combined loading of a bias voltage and a transverse electric field, both the majority and minority spin currents in antiferromagnetic zGNRs diverge sharply from those predicted for their ferromagnetic counterparts. The spin up current shows a non-monotonic variation (negative differential resistance) with bias voltage, as observed in some deformed zGNR 29 and bridged zGNR 30 systems. Analysis of the associated band gaps 31 , transmission spectra 32 , charge transfer plots 33 , and transmission pathways may be used to relate the spin current variations to changes in the zGNR electronic structure.…”

Section: Introductionmentioning

confidence: 75%

Spin current distribution in antiferromagnetic zigzag graphene nanoribbons under transverse electric fields

Zhang

Fahrenthold

2021

Sci Rep

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The spin current transmission properties of narrow zigzag graphene nanoribbons (zGNRs) have been the focus of much computational research, investigating the potential application of zGNRs in spintronic devices. Doping, fuctionalization, edge modification, and external electric fields have been studied as methods for spin current control, and the performance of zGNRs initialized in both ferromagnetic and antiferromagnetic spin states has been modeled. Recent work has shown that precise fabrication of narrow zGNRs is possible, and has addressed long debated questions on their magnetic order and stability. This work has revived interest in the application of antiferromagnetic zGNR configurations in spintronics. A general ab initio analysis of narrow antiferromagnetic zGNR performance under a combination of bias voltage and transverse electric field loading shows that their current transmission characteristics differ sharply from those of their ferromagnetic counterparts. At relatively modest field strengths, both majority and minority spin currents react strongly to the applied field. Analysis of band gaps and current transmission pathways explains the presence of negative differential resistance effects and the development of spatially periodic electron transport structures in these nanoribbons.

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Section: Introductionmentioning

confidence: 75%

Spin current distribution in antiferromagnetic zigzag graphene nanoribbons under transverse electric fields

Zhang

Fahrenthold

2021

Sci Rep

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“…The large-scale fabrication of 1D derivatives of variety range of 2D materials, such as graphene [28][29][30][31] , MoS 2 8,32 , and phosphorene 33 , have been reported. These advances promoted their integration into device applications of spintronics 34,35 , optoelectronics 36 , and quantum information technologies [37][38][39] .…”

Section: Introductionmentioning

confidence: 99%

Edge and Width Dependent Electronic Properties of Nanoribbons of Manganese Oxide

Sozen¹,

C.²,

Şahin³

2022

Preprint

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In the present work, the structural, magnetic, and electronic properties of the two-and onedimensional honeycomb structures of recently synthesized MnO [Zhang et al. Nat. Commun., 20, 1073-1078 (2021] are investigated by using first principles calculations. Our calculations show that the single layer 2D MnO crystal has a degenerate antiferromagnetic (AFM) ground state and a relatively less favorable ferromagnetic (FM) state. In addition, magnetic anisotropy calculations unveil that the easy-axis direction for magnetism originating from unpaired electron states in manganese atoms is normal to the crystal plane. Electronically, while the FM-MnO is a direct semiconductor with a narrow bandgap, AFM phases display large indirect bandgap semiconducting behavior. Moreover, calculations on nanoribbons of MnO reveal that zigzag edged ribbons display metallic bahavior, whereas armchair edged nanoribbons are semiconductors. Magnetically, for both zigzag-or armchair-edged nanoribbons, AFM order perpendicular to the nanoribbon growth direction is found to be favorable over the other AFM and FM orders. Moreover, depending on the edge symmetry and ribbon width, forbidden band gap values of nanoribbons display distinct family behaviors.

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“…Early research largely focused on the potential role of GNRs in field-effect transistors (3,4), revolving around tailoring the size of their bandgap through width, edge, and heteroatom engineering (2,(5)(6)(7), as well as the formation of heterojunctions through copolymerization (5,8). Recently, the design of ever more intricate GNR structures has opened new avenues of exploration, including topics such as negative differential resistance (9)(10)(11)(12), spintronics (13,14), magnetism (15)(16)(17)(18)(19)(20), and quantum information processing (21)(22)(23).…”

Section: Introductionmentioning

confidence: 99%

Pseudo-atomic orbital behavior in graphene nanoribbons with four-membered rings

et al. 2021

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Spin negative differential resistance and high spin filtering behavior realized by devices based on graphene nanoribbons and graphitic carbon nitrides

Cited by 22 publications

References 36 publications

Spin current distribution in antiferromagnetic zigzag graphene nanoribbons under transverse electric fields

Spin current distribution in antiferromagnetic zigzag graphene nanoribbons under transverse electric fields

Edge and Width Dependent Electronic Properties of Nanoribbons of Manganese Oxide

Pseudo-atomic orbital behavior in graphene nanoribbons with four-membered rings

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