Spin-orbit interaction in SnO2 based diluted magnetic semiconductor: Ab-initio calculations

Improving the magnetic moment of Ca2Ge and promoting the conversion of semiconductors to diluted magnetic semiconductors using Mn-doping

“…[9][10][11][12][13] The preparation of DMS mainly uses transition metal atoms or rare earth ions, which have spin magnetic moment, doped to substitute some atoms in the semiconductor material. [14][15][16] The magnetic moment of DMS is produced by the exchange of p state electrons of the anions and d state electrons of the magnetic ions, which are changed by the external temperature and doping concentration, so they may be ferromagnetic, sub ferromagnetic and antimagnetic. 17,18 As a new type of II-VI narrow band gap semiconductor, Ca 2 Ge has high T C , high carrier mobility, low dielectric constant, and excellent optical and other properties.…”

F+ center exchange mechanism and magnetocrystalline anisotropy in Ni-doped 3C-SiC

“…However, the report on the observation of intrinsic ferromagnetism in Co-doped TiO 2 films through depth-resolved low energy muon spin rotation experiments by Saadaoui et al [14] has strengthened the belief that it is indeed possible to induce long-range magnetic interactions in wide band gap semiconductors through transition metal doping. Long Lin et al showed through theoretical studies that co-doping Mn and Co atoms in the wideband gap semiconductor SnO 2 stabilizes the ferromagnetic state [15,16]. Theoretical studies also show that dilute magnetic systems could be used for gas sensing applications [17][18][19].…”