As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Néel vector orientation in polycrystalline NiO via spin Hall magnetoresistance (SMR). Secondly, by applying strain through a piezo-electric substrate, we reduce the critical magnetic field required to reach a saturation of the SMR signal, indicating a change of the anisotropy. Our results are consistent with polycrystalline NiO exhibiting a positive sign of the in-plane magnetostriction. This method of anisotropy-tuning offers an energy efficient, onchip alternative to manipulate a polycrystalline antiferromagnet's magnetic state.Antiferromagnetic insulators (AFMIs) are promising candidates for device applications because of their high frequency spin dynamics, resilience to magnetic fields, and lack of stray fields 1 . However, functionalizing AFMIs requires reliable electrical mechanisms to detect [2][3][4] and manipulate 5-9 the magnetic state. For detection, it has been shown that the average Néel vector orientation, n, in AFMIs can be identified via the spin Hall magnetoresistance (SMR) present in an adjacent heavy metal (HM) layer [2][3][4]10 . In such a system, the HM's resistance depends on the angle α between n and the probing current, resulting in a sin 2 (α) relationship