Spin transport in magnetic graphene superlattices

Niu, Zhi Ping; Li, Fuxiang; Wang, B. G.; Sheng, L.; Xing, D. Y.

doi:10.1140/epjb/e2008-00413-5

Cited by 51 publications

(28 citation statements)

References 36 publications

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“…This does not only reflects the unique transport properties of Dirac electrons and holes in graphene nanostructures, but also promotes the application of graphene nanostructure in nanoelectronic devices. Motivated by recent experiments on graphene superlattices (SLs) [24][25][26], we consider a system of Dirac fermions through a periodic potential in graphene. We analyze the GH shifts of the transmitted electron beam scattered by the potential profile presented in Figure 1 through AA-staked BLG.…”

Section: Introductionmentioning

confidence: 99%

Goos–Hänchen shifts in AA-stacked bilayer graphene superlattices

Zahidi

Redouani

Jellal

2016

Physica E: Low-dimensional Systems and Nanostructures

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The quantum Goos-Hänchen shifts of the transmitted electron beam through an AA-stacked bilayer graphene superlattices is investigated. We found that the band structures of graphene superlattices can have more than one Dirac point, their locations do not depend on the number of barriers. It was revealed that any n-barrier structure is perfectly transparent at normal incidence around the Dirac points created in the superlattices. We showed that the Goos-Hänchen shifts display sharp peaks inside the transmission gap around two Dirac points (E = V B + τ , E = V W + τ ), which are equal to those of transmission resonances. The obtained Goos-Hänchen shifts are exhibiting negative as well as positive behaviors and strongly depending on the location of Dirac points. It is observed that the maximum absolute values of the shifts increase as long as the number of barriers is increased. Our analysis is done by considering four cases: single, double barriers, superlattices without and with defect.

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Section: Introductionmentioning

confidence: 99%

Goos–Hänchen shifts in AA-stacked bilayer graphene superlattices

Zahidi

Redouani

Jellal

2016

Physica E: Low-dimensional Systems and Nanostructures

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“…However, magnetic conducting substrates, which naturally shortcircuit the graphene layer, fundamentally restrict the design of novel types of spin switches. Therefore, much effort has been diverted to the use of magnetic insulators to induce magnetism in graphene by the proximity effect [34][35][36][37][38].…”

mentioning

confidence: 99%

Proximity Effects Induced in Graphene by Magnetic Insulators: First-Principles Calculations on Spin Filtering and Exchange-Splitting Gaps

et al. 2013

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We report on first-principles calculations of spin-dependent properties in graphene induced by its interaction with a nearby magnetic insulator (europium oxide, EuO). The magnetic proximity effect results in spin polarization of graphene π orbitals by up to 24%, together with a large exchange-splitting band gap of about 36 meV. The position of the Dirac cone is further shown to depend strongly on the graphene-EuO interlayer. These findings point toward the possible engineering of spin gating by the proximity effect at a relatively high temperature, which stands as a hallmark for future all-spin information processing technologies.

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“…For this purpose, we suppose that incident electron with energy E, propagates at angle / along x-axis. General solution to the HamiltonianĤ 1 H 0 þ V 0 ðxÞ in the ith strip can be written in the following form [22][23][24][25].…”

Section: Tunnelign In Mgsmentioning

confidence: 99%

“…Transport properties in several superlattices have been studied and lots of interesting results have been achieved [18][19][20][21][22][23][24][25][26][27][28]. The transport properties in graphene superlattice structure were first studied in Ref.…”

Section: Introductionmentioning

confidence: 99%

Calculation of current density for graphene superlattice in a constant electric field

Sattari

2015

J Theor Appl Phys

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Based on the transfer-matrix method, this paper has investigated the electrical transport properties in monolayer and bilayer graphene superlattices modulated by a homogeneous electric field. It is found that the angular range of the transmission probability can be efficiently controlled by the number of barriers. In addition, current density has an oscillatory behavior with respect to external field and Fermi energy. In other words, the current density in monolayer and bilayer graphene superlattices can be controlled by changing either the external field or the Fermi energy. Meanwhile, in the bilayer system unlike monolayer structure the value of current density can be zero. So, for designing electronic devices, bilayer graphene is more efficient.

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Spin transport in magnetic graphene superlattices

Cited by 51 publications

References 36 publications

Goos–Hänchen shifts in AA-stacked bilayer graphene superlattices

Goos–Hänchen shifts in AA-stacked bilayer graphene superlattices

Proximity Effects Induced in Graphene by Magnetic Insulators: First-Principles Calculations on Spin Filtering and Exchange-Splitting Gaps

Calculation of current density for graphene superlattice in a constant electric field

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