Spray Selective Etch Process for Short-Cavity Fabrication of GaAs/GaAlAs Surface Emitting Laser

Abstract

We have improved the fabrication process forming the shortcavity structure for GaAs/GaAlAs vertical cavity surface emitting lasers. A complete flat epitaxial surface for the output side mirror was obtained by selectively removing the GaAs substrate using a spray wet etch. We present some results on surface characterization.