The effect of infrared (IR) radiation on an indium tin oxide (ITO) transparent conductor, prepared by a pyrosol method, was investigated. As-deposited ITO was irradiated with IR in nitrogen gas at atmospheric pressure and temperatures ranging from 50 to 430 °C.Typically, IR irradiation of the as-deposited ITO at 400 °C for 60 minutes reduced the electrical resistance by 60%, raised the work function by 0.5 eV, and enlarged the optical energy band gap by 0.05 V. The resistance was mainly decreased during the initial 10 minutes of irradiation. The results of field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) analysis showed that the IR irradiation enhanced the crystallinity of the ITO. These results, derived from treatment at atmospheric pressure and using inexpensive equipment, suggest that IR irradiation should be an inexpensive method to reduce the resistance and raise the work function of as-deposited pyrosol ITO.