Sprayed SnO2 films: Growth mechanism and film structure characterization

Sanz‐Maudes, J.; Rodrı́guez, T.

doi:10.1016/0040-6090(80)90035-8

Cited by 87 publications

(12 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For the film grown at 500 1C, a weak peak of SnO 2 (3 1 1) reflection is also detected. It should be noted that most of the SnO 2 films are grown with the (1 1 0) preferred orientation [9,10]. However, the (1 1 0) peak is absent in our samples.…”

Section: Methodsmentioning

confidence: 61%

Structure and photoluminescence properties of epitaxial SnO2 films grown on α-Al2O3 (012) by MOCVD

Zhu

Luan

et al. 2011

Journal of Luminescence

View full text Add to dashboard Cite

Section: Methodsmentioning

confidence: 61%

Structure and photoluminescence properties of epitaxial SnO2 films grown on α-Al2O3 (012) by MOCVD

Zhu

Luan

et al. 2011

Journal of Luminescence

View full text Add to dashboard Cite

“…Transparent and conducting coatings of tin oxide have gained importance in the field of research as well as technology because of their variety of applications. There is increasing usage of these films as thin film resistors [l], gas sensors [2], antireflection coatings [3] and as transparent electrodes in liquid crystal displays [4], optoelectronic devices [5], and heterojunction solar cells [6,7]. In addition to the remarkable combination of electrical and optical properties, tinoxide films have a very good adhesion on a variety of substrates and good chemical and mechanical stability.…”

Section: Introductionmentioning

confidence: 99%

Influence of Thickness and Substrate on the Properties of SnO2 Films Deposited by CVD

Rup

Mansingh

1991

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

A comparative study of the physical properties of undoped, nonstoichiometric SnO, films on glass and quartz substrate is presented. With increasing film thickness, the crystallinity improves, the preferred orientation of the grains changes from the [loll to the [200] direction, and the carrier concentration decreases. The highest conductivity and mobility obtained are 2.5 x 10, W' cm-l and 13 cmZ/V s, respectively, for films on glass and 6.0 x 10' 0-' cmand 44 cm2/V s, respectively, for films on quartz substrate. It is indicated that the diffusion of alkali metal ions degrades the properties of the films deposited on glass substrate. The scattering mechanism in the films is also investigated. The figure of merit values obtained on glass (3.1 x a-') are amongst the highest values reported for undoped SnO, films. Es wird eine vergleichende Untersuchung der physikalischen Eigenschaften von undotierten, nichtstochiometrischen Sn0,-Schichten auf Glas-und Quarzsubstraten durchgefuhrt. Mit wachsender Schichtdicke verbessert sich die Kristallinitat, die bevorzugte Orientierung der Korner andert sich von der [loll-zur [200]-Richtung und die Tragerkonzentration nimmt ab. Die hochste erhaltene Leitfahigkeit und Beweglichkeit betragt 2,5 x 10' !X' cm-' bzw. 13 cmZ/V s fur Schichten auf Glas und 6,O x 10' Rcm-' bzw. 44 cmZ/V s fur Schichten auf Quarzsubstraten. Es wird gezeigt, daB die Diffusion von Alkalimetallionen die Eigenschaften der auf Glassubstrate abgeschiedenen Schichten degradiert. Der Streumechanismus in diesen Schichten wird ebenfalls untersucht. Die auf Glas (3,l x n-')-Substraten erhaltenen Wirkungsgrade liegen zwischen den hochsten fur undotierte Sn0,-Schichten angegebenen Werten.

show abstract

“…[1][2][3][4][5][6] This intrinsic n-type semiconductor, 1,2,7,8 with a dipole forbidden direct bandgap energy of B3.6 eV at room temperature, 1,9,10 crystallizes in the tetragonal rutile structure. [1][2][3][4][5][6] This intrinsic n-type semiconductor, 1,2,7,8 with a dipole forbidden direct bandgap energy of B3.6 eV at room temperature, 1,9,10 crystallizes in the tetragonal rutile structure.…”

Section: Introductionmentioning

confidence: 99%

“…Metal oxides such as SnO 2 are known to be relevant materials for electronic applications including transparent conductive oxides (TCOs), dye sensitized solar cells (DSSCs), oxidation catalysts, chemical sensors and functional coatings. [1][2][3][4][5][6] This intrinsic n-type semiconductor, 1,2,7,8 with a dipole forbidden direct bandgap energy of B3.6 eV at room temperature, 1,9,10 crystallizes in the tetragonal rutile structure. 1,11 When intentionally doped with lanthanides the transparent oxide also exhibits as advantage the possibility of spreading the energetic levels of the trivalent charged lanthanide ions, being suitable for developing lanthanidebased optical emitters.…”

Section: Introductionmentioning

confidence: 99%

Luminescence studies on SnO₂ and SnO₂:Eu nanocrystals grown by laser assisted flow deposition

Santos

Rodrigues

Holz

et al. 2015

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

Transparent conductive tin oxide materials have been a research topic extensively studied in recent years due to the great interest for many applications. However, in most of them, the pure form is rarely used, being usually modified by the incorporation of dopants. Selecting the most appropriate technique to develop nanocrystals of doped tin oxide and understanding the influence of dopant on the optical properties are the challenges that need to be addressed when envisaging devices. To fulfill this objective, the recently developed laser assisted flow deposition (LAFD) method is explored to grow SnO2 and SnO2:Eu nanocrystals. The morphology of these nanocrystals was investigated by scanning electron microscopy and well defined prismatic nanocrystals with sizes of ∼60 nm were identified. The crystalline quality assessed by X-ray diffraction measurements and Raman spectroscopy indicates that the produced nanocrystals are monophasic and crystallize in the tetragonal rutile structure. Steady state luminescence studies provide the information on the optical active centres in the SnO2 and SnO2:Eu nanocrystals. For the undoped samples only broad emission bands were observed by pumping the samples in the ultraviolet region. The broad emission was found to be an overlap of green and red optical centres as identified by temperature and excitation intensity dependent luminescence. The latter was found to exhibit an excitonic-related behaviour and the green emission was found to be of utmost importance to discuss the intraionic luminescence in the doped samples. For the SnO2:Eu nanocrystals the luminescence is dominated by the magnetic allowed (5)D0 → (7)F1 transition with the ions in almost undistorted centrosymmetric sites. The ion luminescence integrated intensity is found to increase with increasing temperatures being well accounted for a thermal population provided by the thermal quenching of the green band.

show abstract

Sprayed SnO2 films: Growth mechanism and film structure characterization

Cited by 87 publications

References 15 publications

Structure and photoluminescence properties of epitaxial SnO2 films grown on α-Al2O3 (012) by MOCVD

Structure and photoluminescence properties of epitaxial SnO2 films grown on α-Al2O3 (012) by MOCVD

Influence of Thickness and Substrate on the Properties of SnO2 Films Deposited by CVD

Luminescence studies on SnO₂ and SnO₂:Eu nanocrystals grown by laser assisted flow deposition

Contact Info

Product

Resources

About

Sprayed SnO2 films: Growth mechanism and film structure characterization

Cited by 87 publications

References 15 publications

Structure and photoluminescence properties of epitaxial SnO2 films grown on α-Al2O3 (012) by MOCVD

Structure and photoluminescence properties of epitaxial SnO2 films grown on α-Al2O3 (012) by MOCVD

Influence of Thickness and Substrate on the Properties of SnO2 Films Deposited by CVD

Luminescence studies on SnO2 and SnO2:Eu nanocrystals grown by laser assisted flow deposition

Contact Info

Product

Resources

About

Luminescence studies on SnO₂ and SnO₂:Eu nanocrystals grown by laser assisted flow deposition