Sputter-assisted plasma CVD of wide or narrow optical bandgap amorphous CNx:H films using i-C4H10/N2 supermagnetron plasma

Kinoshita, Haruhisa; Ikuta, Rikizo; Yamaguchi, Tomuo

doi:10.1016/j.tsf.2007.10.017

Cited by 7 publications

(5 citation statements)

References 24 publications

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“…a-C:H and its nitride (a-CN x :H) showed more than ten orders of magnitude difference in room temperature conductivity, depending on the deposition method used [5][6][7]. The proportion of sp 2 hybridized carbon atoms and their clustering in smaller or larger size determine the optical band gap and produce a significant influence on the electrical transport as well [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Pulsed Supermagnetron Plasma CVD of a-CNx:H Electron-Transport Films for Au/a-CNx:H/p-Si Photovoltaic Cells

Kinoshita¹,

Suzuki²

2011

JMP

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Hydrogenated amorphous carbon nitride (a-CN x :H) films were formed on p-Si wafers set on a lower electrode by pulsed supermagnetron plasma CVD using i-C 4 H 10 and N 2 gases. Lower electrode RF power (LORF) of 13.56 MHz (50-800 W) was modulated by a 2.5-kHz pulse at a duty ratio of 12.5%, and upper electrode RF power (UPRF) of 50-400 W was supplied continuously. The optical band gap decreased with an increase in LORF at each UPRF. The open circuit voltage of Au/a-CN x :H/p-Si photovoltaic cells (a-CN x :H film thickness: 25 nm) was about 200 mV for each cell, and the short circuit current density and energy conversion efficiency increased with LORF for each UPRF. The highest energy conversion efficiency of 0.81% was obtained at UPRF/LORF of 200/800 W.

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Section: Introductionmentioning

confidence: 99%

Pulsed Supermagnetron Plasma CVD of a-CNx:H Electron-Transport Films for Au/a-CNx:H/p-Si Photovoltaic Cells

Kinoshita¹,

Suzuki²

2011

JMP

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“…These incremental increases were caused by sputter deposits on a counter electrode, i.e., sputtering of reactive species from the upper electrode surface to the lower electrode surface. 13) The optical band gap was measured at a N 2 concentration of 70% as a function of LORF at UPRFs of 50, 200, and 800 W (Fig. 6) The optical band gap increased with a decrease in LORF from 800 to 0 W. In particular, at an LORF of 50 -800 W, the optical band gap changed slightly with UPRF.…”

Section: Resultsmentioning

confidence: 93%

Pulsed Supermagnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films

Kinoshita

Yamaguchi

2010

Jpn. J. Appl. Phys.

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The design, construction and operation of a compact, high-efficiency Bragg diffraction spectrometer are described. An accurate method of alignment is presented. The spectrometer has been tested with a lead stearate analysing crystal by measuring carbon K (methane) and argon L x-ray energies produced by direct electron beam excitation. The high efficiency of this apparatus is demonstrated by measuring satellite lines of the neon K spectrum with a RbAP analysing crystal.

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“…Hydrogenated amorphous carbon (a-C:H) films attract interest because their properties are suited to opto-electronic and vacuum microelectronic devices, including light emission diodes, photovoltaic cells and field electron emission devices [1]- [10]. In these films, both the optical and electrical properties can be modified by nitrogen doping; i.e., they are usually regarded as hydrogenated amorphous carbon nitride (a-CN x :H) films [11]- [20]. a-CN x :H films sometimes show high electroconductivity.…”

Section: Introductionmentioning

confidence: 99%

“…Management of the substrate temperature and the intrinsic compressive stress of the films are important factors in the electronic device fabrication. In the continuous discharge of SMP for CVD, the surface temperature of the substrate is easily increased to more than 200˚C by applying RF power [19], which causes the films to peel off from the wafers due to the high intrinsic compressive stress in these films [20].…”

Section: Introductionmentioning

confidence: 99%

Fowler-Nordheim Tunneling, Photovoltaic Applications and New Band Structure Models of Electroconductive a-CNx:H Films Formed by Supermagnetron Plasma CVD

Kinoshita¹

2016

JMP

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Hydrogenated amorphous carbon nitride (a-CN x :H) films were formed on Al films deposited on Si or glass (SiO 2) substrates, using pulsed radio frequency (PRF) supermagnetron plasma (SMP) chemical vapor deposition (CVD) with N 2 /i-C 4 H 10 mixed gases. a-CN x :H films were grown under the upper and lower electrode RF powers (13.56 MHz) of continuous and pulsed conditions, respectively, which showed low band gap of about 0.7 eV. a-CN x :H films deposited on the Al/Si or Al/SiO 2 substrates showed same low threshold emission electric field (E TH) of 12 V/μm. Multiple layer of Al or ITO (anode)/50nm-SiO 2 /a-CN x :H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CN x :H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron conduction models were proposed for the active states of both the field emission and FN tunneling devices and photovoltaic cells.

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Sputter-assisted plasma CVD of wide or narrow optical bandgap amorphous CNx:H films using i-C4H10/N2 supermagnetron plasma

Cited by 7 publications

References 24 publications

Pulsed Supermagnetron Plasma CVD of a-CN<sub>x</sub>:H Electron-Transport Films for Au/a-CN<sub>x</sub>:H/p-Si Photovoltaic Cells

Pulsed Supermagnetron Plasma CVD of a-CN<sub>x</sub>:H Electron-Transport Films for Au/a-CN<sub>x</sub>:H/p-Si Photovoltaic Cells

Pulsed Supermagnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films

Fowler-Nordheim Tunneling, Photovoltaic Applications and New Band Structure Models of Electroconductive a-CN<sub>x</sub>:H Films Formed by Supermagnetron Plasma CVD

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Sputter-assisted plasma CVD of wide or narrow optical bandgap amorphous CNx:H films using i-C4H10/N2 supermagnetron plasma

Cited by 7 publications

References 24 publications

Pulsed Supermagnetron Plasma CVD of a-CN&lt;sub&gt;x&lt;/sub&gt;:H Electron-Transport Films for Au/a-CN&lt;sub&gt;x&lt;/sub&gt;:H/p-Si Photovoltaic Cells

Pulsed Supermagnetron Plasma CVD of a-CN&lt;sub&gt;x&lt;/sub&gt;:H Electron-Transport Films for Au/a-CN&lt;sub&gt;x&lt;/sub&gt;:H/p-Si Photovoltaic Cells

Pulsed Supermagnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Carbon Nitride Films

Fowler-Nordheim Tunneling, Photovoltaic Applications and New Band Structure Models of Electroconductive a-CN&lt;sub&gt;x&lt;/sub&gt;:H Films Formed by Supermagnetron Plasma CVD

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Pulsed Supermagnetron Plasma CVD of a-CN<sub>x</sub>:H Electron-Transport Films for Au/a-CN<sub>x</sub>:H/p-Si Photovoltaic Cells

Pulsed Supermagnetron Plasma CVD of a-CN<sub>x</sub>:H Electron-Transport Films for Au/a-CN<sub>x</sub>:H/p-Si Photovoltaic Cells

Fowler-Nordheim Tunneling, Photovoltaic Applications and New Band Structure Models of Electroconductive a-CN<sub>x</sub>:H Films Formed by Supermagnetron Plasma CVD