Sputter deposited GeSn alloy: A candidate material for temperature sensing layers in uncooled microbolometers

Abdel‐Rahman, M.; Alduraibi, M.; Hezam, Mahmoud; Ilahi, Bouraoui

doi:10.1016/j.infrared.2019.01.023

Cited by 15 publications

(10 citation statements)

References 19 publications

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“…Epitaxial GeSn films with high performances on lasing, light emission, and detection were obtained by the reduced-pressure chemical vapor deposition method. ,,− However, low-cost and efficient deposition methods, such as the versatile magnetron sputtering (MS), are also of high interest. − Amorphous GeSn layers with very large concentrations of Sn, without phase segregation, have been obtained by MS deposition at room temperature. Higher temperature thermal treatment (<500 °C) forms polycrystalline GeSn films, but the nonradiative carrier recombination induced by grain boundaries limits the devices’ performances.…”

Section: Introductionmentioning

confidence: 99%

GeSn/SiO₂ Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

Slav

Dascalescu

Lepadatu

et al. 2020

ACS Appl. Mater. Interfaces

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The development of short-wave infrared (SWIR) photonics based on GeSn alloys is of high technological interest for many application fields, such as the Internet of things or pollution monitoring. The manufacture of crystalline GeSn is a major challenge, mainly because of the low miscibility of Ge and Sn. The use of embedded GeSn nanocrystals (NCs) by magnetron sputtering is a cost-effective and efficient method to relax the growth conditions. We report on the use of GeSn/SiO2 multilayer deposition as a way to control the NC size and their insulation. The in situ prenucleation of NCs during deposition was followed by ex situ rapid thermal annealing. The nanocrystallization of 20×(11nm_Ge0.865Sn0.135/1.5nm_SiO2) multilayers leads to formation of GeSn NCs with ∼16% Sn concentration and ∼9 nm size. Formation of GeSn domes that are vertically correlated contributes to the nanocrystallization process. The absorption limit of ∼0.4 eV in SWIR found by ellipsometry is in agreement with the spectral photosensitivity. The ITO/20×(GeSn NC/SiO2)/p-Si/Al diodes show a maximum value of the SWIR photosensitivity at a reverse voltage of 0.5 V, with extended sensitivity to wavelengths longer than 2200 nm. The multilayer diodes have higher photocurrent efficiency compared to diodes based on a thick monolayer of GeSn NCs.

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Section: Introductionmentioning

confidence: 99%

GeSn/SiO₂ Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

Slav

Dascalescu

Lepadatu

et al. 2020

ACS Appl. Mater. Interfaces

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“…This study shows that Si 1-x Sn x alloys are a suitable, simple, and low-cost replacement for thermometer layers used in uncooled infrared microbolometers. silicon (a-Si:H) (2-5% K À1 ), [18][19][20] silicon germanium (Si x Ge 1-x ) (%4.5% K À1 ), [21,22] germanium tin (Ge 1-x Sn x ) (%4% K À1 ), [23] amorphous germanium silicon oxide (Ge x Si y O 1-x-y ) (%5% K À1 ), [24] and semiconducting phase of yttrium barium copper oxide (YaBaCuO) (2.5-4% K À1 ), [25] and others have exhibited high TCR values and have been explored as temperature sensing layers in microbolometers.…”

Section: Introductionmentioning

confidence: 99%

“…Various materials have been utilized as active temperature sensing layers in microbolometers. These materials include thin films made of vanadium oxide (VO x ) (1.1–4% K −1 ), [ 8–17 ] hydrogenated amorphous silicon (a‐Si:H) (2–5% K −1 ), [ 18–20 ] silicon germanium (Si x Ge 1– x ) (≈4.5% K −1 ), [ 21,22 ] germanium tin (Ge 1– x Sn x ) (≈4% K −1 ), [ 23 ] amorphous germanium silicon oxide (Ge x Si y O 1– x – y ) (≈5% K −1 ), [ 24 ] and semiconducting phase of yttrium barium copper oxide (YaBaCuO) (2.5–4% K −1 ), [ 25 ] and others have exhibited high TCR values and have been explored as temperature sensing layers in microbolometers.…”

Section: Introductionmentioning

confidence: 99%

Amorphous SiSn Alloy: Another Candidate Material for Temperature Sensing Layers in Uncooled Microbolometers

ElGhonimy

Abdel‐Rahman

Hezam

et al. 2021

Physica Status Solidi (b)

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Herein, the prospect of using amorphous Si1–x Sn x alloys as alternative temperature‐sensing active materials in microbolometers is evaluated by studying their temperature‐dependent resistive properties along with their infrared optical properties. Si1–x Sn x thin films (200 nm thick), with varying Sn concentrations, are prepared at room temperature by cosputtering from Si and Sn targets using simultaneous radio frequency and DC magnetron sputter deposition. Low beam energy X‐ray microanalysis is used to estimate the atomic concentrations of the prepared films. Atomic force microscopy analysis shows an increase in the root‐mean‐square surface roughness of the prepared Si1–x Sn x thin films, with increasing Sn content. Sheet resistance versus temperature measurements are performed yielding temperature coefficients of resistance of 3.25, 2.65, and 1.72% K−1 at resistivity values of 116.18, 27.36, and 2.34 Ω cm for Sn concentrations of 35%, 44%, and 48%, respectively. Infrared ellipsometry measurements are performed to extract the optical properties of the Si1–x Sn x thin films and optical simulations confirm that a Fabry–Pérot cavity microbolometer configuration containing an Si1–x Sn x thin film can achieve high absorptance in the 8–12 μm band. This study shows that Si1–x Sn x alloys are a suitable, simple, and low‐cost replacement for thermometer layers used in uncooled infrared microbolometers.

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“…Even if the complex photonics integrated circuits which require integrated lasers are not usually targeted, simpler and cost efficient deposition methods, such as magnetron sputtering (MS) and other physical vapor deposition, are investigated. − MS deposition is a versatile technique used for room temperature deposition of amorphous GeSn layers with large concentrations of Sn without phase segregation. Annealing at higher temperatures (<500 °C) forms polycrystalline GeSn films where recombination at grain boundaries limits device performances.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection

Dascalescu

Zoita

Slav

et al. 2020

ACS Appl. Mater. Interfaces

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GeSn alloys have the potential of extending the Si photonics functionality in shortwave infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a relaxed Ge buffer on Si(100) wafer by using high power impulse magnetron sputtering (HiPI-MS). Detailed X-ray reciprocal space mapping and HRTEM investigations indicate higher crystalline quality of GeSn epitaxial layers deposited by Ge HiPI-MS compared to commonly used radio frequency magnetron sputtering (RF-MS). To obtain a rectifying heterostructure for SWIR light detection, a layer of GeSn nanocrystals (NCs) embedded in oxide was deposited on the epitaxial GeSn one. Embedded GeSn NCs are obtained by cosputtering deposition of (Ge1–x Sn x )1–y (SiO2) y layers and subsequent rapid thermal annealing at a low temperature of 400 °C. Intrinsic GeSn structural defects give p-type behavior, while the presence of oxygen leads to the n-character of the embedded GeSn NCs. Such an embedded NCs/epitaxial GeSn p–n heterostructure shows superior photoelectrical response up to 3 orders of magnitude increase in the 1.2–2.5 μm range, as compared to performances of diode based only on embedded NCs.

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Sputter deposited GeSn alloy: A candidate material for temperature sensing layers in uncooled microbolometers

Cited by 15 publications

References 19 publications

GeSn/SiO₂ Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

GeSn/SiO₂ Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

Amorphous SiSn Alloy: Another Candidate Material for Temperature Sensing Layers in Uncooled Microbolometers

Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection

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Sputter deposited GeSn alloy: A candidate material for temperature sensing layers in uncooled microbolometers

Cited by 15 publications

References 19 publications

GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

Amorphous SiSn Alloy: Another Candidate Material for Temperature Sensing Layers in Uncooled Microbolometers

Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection

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Product

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GeSn/SiO₂ Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics

GeSn/SiO₂ Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics