Sputter yield of curved surfaces

Urbassek, Herbert M.; Bradley, R. Mark; Nietiadi, Maureen L.; Möller, W.

doi:10.1103/physrevb.91.165418

Cited by 33 publications

(31 citation statements)

References 32 publications

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“…SRIM is not a dynamic code, it consider every atomic layer as fresh without considering the effect of previous bombardment this can slightly change the sputtering yield based on surface conditions. 33,34 These results validate the QCM measurement system with the assumption that sticking of Si atom is one while condensing on QCM surface. Figure 4 shows volumetric sputtering yield profiles for various ion energies based on QCM measurements for BN using Xenon ion beam energies of 100 eV (Fig.…”

Section: E Qcm Data Validationsupporting

confidence: 65%

BN/BNSiO2 sputtering yield shape profiles under stationary plasma thruster operating conditions

et al. 2016

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Quartz Crystal Microbalance (QCM) is used to measure the volumetric and total sputtering yield of Boron Nitride (BN) and Boron Nitride Silicon Dioxide (BNSiO2) bombarded by Xenon ions in the energy range of 100 eV to 550 eV. Sputtering yield shape profiles are reported at various angles of incidence 0-85° with surface normal and compared with modified Zhang model. The yield shape profile is found to be symmetric at normal incidence and asymmetric at oblique incidence. Both the materials show a sudden jump in the sputtering yield above 500 eV and at an angle of incidence in the range of 45-65°. Erosion of BN at as low as 74 eV ion energy is predicted using generalized Bohdansky model. BNSiO2 show a marginally higher sputtering yield compare to BN.

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Section: E Qcm Data Validationsupporting

confidence: 65%

BN/BNSiO2 sputtering yield shape profiles under stationary plasma thruster operating conditions

et al. 2016

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“…In addition, to make a theory of the pattern formation, the dependence of the sputter yield on the surface curvature at the point of impact is needed [21]. Recent work has shown that even though the Sigmund model does not do particularly well in predicting the sputter yield of a flat surface, it does much better in describing how the sputter yield changes as the surface curvature is increased provided that the curvature is not too large [22,23].…”

Section: Discussionmentioning

confidence: 99%

“…In contrast, experiments invariably show that the sputter yield at first increases with θ, but then attains a maximum before falling to zero at grazing incidence. It is therefore remarkable that the Sigmund model does quite well in predicting how the sputter yield depends on the surface curvature if the angle of incidence is not too close to grazing and the radii of curvature are not too small [22,23].…”

Section: Introductionmentioning

confidence: 99%

Probing the limitations of Sigmund's model of spatially resolved sputtering using Monte Carlo simulations

2016

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Sigmund's model of spatially resolved sputtering is the underpinning of many models of nanoscale pattern formation induced by ion bombardment. It is based on three assumptions: (i) the number of sputtered atoms is proportional to the nuclear energy deposition (NED) near the surface, (ii) the NED distribution is independent of the orientation and shape of the solid surface and is identical to the one in an infinite medium, and (iii) the NED distribution in an infinite medium can be approximated by a Gaussian. We test the validity of these assumptions using Monte Carlo simulations of He, Ar, and Xe impacts on Si at energies of 2, 20, and 200 keV with incidence angles from perpendicular to grazing. We find that for the more commonly-employed beam parameters (Ar and Xe ions at 2 and 20 keV and non-grazing incidence), the Sigmund model's predictions are within a factor of 2 of the Monte Carlo results for the total sputter yield and the first two moments of the spatially resolved sputter yield. This is partly due to a compensation of errors introduced by assumptions (i) and (ii). The Sigmund model, however, does not describe the skewness of the spatially resolved sputter yield, which is almost always significant. The approximation is much poorer for He ions and/or high energies (200 keV). All three of Sigmund's assumptions break down at grazing incidence angles. In all cases, we discuss the origin of the deviations from Sigmund's model.

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“…The SBE is conventionally set to the enthalpy of sublimation in the present case for Si to the bulk value of 4.7 eV. 6,7 The limitations of this approximation are already discussed in the original publication. 20 The accuracy with which Monte Carlo (such as SRIM, 1 iradina, 11 SDTrimSP 21 and TRIDYN 22 ) codes can quantitatively predict sputtering depends on the correct SBE and the correct interaction potential between the atoms and ions within the target, especially at low collision energies.…”

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confidence: 99%

Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires

et al. 2015

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Silicon nanowires of various diameters were irradiated with 100 keV and 300 keV Ar+ ions on a rotatable and heatable stage. Irradiation at elevated temperatures above 300 °C retains the geometry of the nanostructure and sputtering can be gauged accurately. The diameter dependence of the sputtering shows a maximum if the ion range matches the nanowire diameter, which is in good agreement with Monte Carlo simulations based on binary collisions. Nanowires irradiated at room temperature, however, amorphize and deform plastically. So far, plastic deformation has not been observed in bulk silicon at such low ion energies. The magnitude and direction of the deformation is independent of the ion-beam direction and cannot be explained with mass-transport in a binary collision cascade but only by collective movement of atoms in the collision cascade with the given boundary conditions of a high surface to volume ratio.

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Sputter yield of curved surfaces

Cited by 33 publications

References 32 publications

BN/BNSiO2 sputtering yield shape profiles under stationary plasma thruster operating conditions

BN/BNSiO2 sputtering yield shape profiles under stationary plasma thruster operating conditions

Probing the limitations of Sigmund's model of spatially resolved sputtering using Monte Carlo simulations

Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires

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