1986
DOI: 10.1016/0167-2584(86)90940-0
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Sputtering of silicon by multiply charged ions

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Cited by 4 publications
(2 citation statements)
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“…(1986) it was claimed that, for bombardment of Si with singly charged ions, sputter yields are larger by more than a factor of two than for neutral projectiles of equal mass and energy. However, for 20 keV Ar q+ (q 9) impact on an Si surface, only the secondary-ion yield increased noticeably with q, whereas the respective total sputter yields (dominated by ejection of neutral Si atoms) did not change with q (de Zwart et al . 1986).…”
Section: History Of Potential Sputteringmentioning
confidence: 99%
“…(1986) it was claimed that, for bombardment of Si with singly charged ions, sputter yields are larger by more than a factor of two than for neutral projectiles of equal mass and energy. However, for 20 keV Ar q+ (q 9) impact on an Si surface, only the secondary-ion yield increased noticeably with q, whereas the respective total sputter yields (dominated by ejection of neutral Si atoms) did not change with q (de Zwart et al . 1986).…”
Section: History Of Potential Sputteringmentioning
confidence: 99%
“…While factors like kinematics, energy deposition, material response, and the emission of secondary particles have already been studied extensively [12][13][14][15][16][17][18][19] , the charge state of the ion has been mostly disregarded. For ions with moderate energies, Niels Bohr considered counteracting electron capture and loss processes upon entering a sample and deduced a relation for an equilibrium charge state q eq the projectile accommodates 20 .…”
mentioning
confidence: 99%