SrTiO3/BaTiO3 multilayers thin films for integrated tunable capacitors applications

Guigues, B.; Guillan, J.; Defaÿ, Emmanuel; Garrec, Pierre; Wolozan, David; Bernard, André; Laugier, F.; Pantel, R.; Gagnard, X.; Aid, M.

doi:10.1016/j.jeurceramsoc.2007.02.043

Cited by 18 publications

(10 citation statements)

References 15 publications

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“…The (ST/BT) 5 multilayer thin film with a thickness 65 nm shows a peak between the (110)BT bulk and (110)ST bulk positions, because the BT and ST tend to match their lattice constant. The results of the present study are in agreement with those of Guiques et al [22] Furthermore, Figure 2 also indicates that the (110) reflection of the (ST/BT) 1 occurs at a lower diffraction angle than that of the thin multilayer with n = 2 and 4. In general, line broadening in XRD measurements is a combined effect of crystallite size, nonuniform strain, and instrumental broadening.…”

Section: Resultssupporting

confidence: 93%

“…This result is due to the superposition of the two (110) rejections of ST and BT. Guigues et al [22] pointed out that, in the XRD pattern of a (ST/BT) multilayer thin film with a thickness of 75 nm, only the (110)ST and (110)BT were present and that perovskite structure exists for both. The (ST/BT) 5 multilayer thin film with a thickness 65 nm shows a peak between the (110)BT bulk and (110)ST bulk positions, because the BT and ST tend to match their lattice constant.…”

Section: Resultsmentioning

confidence: 99%

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Crystal Structure and Dielectric Characterization of a (SrTiO3/BaTiO3) n Multilayer Film Prepared by Radio Frequency Magnetron Sputtering

Lin

Hsiao

et al. 2010

Metall Mater Trans A

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multilayer films with Pt bottom and top electrodes have been prepared by a double target radio frequency (RF) magnetron sputtering, and their dielectric properties have been characterized as a function of temperature, frequency, bias voltage, and applied voltage. The X-ray diffraction (XRD) pattern reveals that the deposited (SrTiO 3 /BaTiO 3 ) n multilayer films have a designed modulation. The interfaces within the multilayer films appear smooth and dense without any microcracks, and the adhesion is very good. The dielectric constant of the (SrTiO 3 /BaTiO 3 ) n multilayer film increases with increasing layer number (n), and the leakage current density is less than 1 9 10 À8 AAEcm À2 for the applied voltage less than 5 V for the 450-nm-thick (SrTiO 3 /BaTiO 3 ) n multilayer films. The remanent polarization (P r ) and the coercive field (E c ) of the 350-nm-thick (SrTiO 3 /BaTiO 3 ) 4 multilayer films are 7 lCAEcm À2 and 60 kVAEcm À1 , respectively, exhibiting ferroelectricity. (SrTiO 3 /BaTiO 3 ) 4 multilayer films have a high E c and a lower P r , as compared with the bulk BaTiO 3 single crystal. The 450-nm-thick (SrTiO 3 /BaTiO 3 ) 4 multilayer films have a leakage current density-voltage characteristic, which makes them suitable for application in DRAMs capacitors.

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Section: Resultssupporting

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Crystal Structure and Dielectric Characterization of a (SrTiO3/BaTiO3) n Multilayer Film Prepared by Radio Frequency Magnetron Sputtering

Lin

Hsiao

et al. 2010

Metall Mater Trans A

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“…Pulsed laser deposition (PLD) is the most preferred method for deposition of ferroelectric multilayered thin films and superlattices to maintain stoichiometry. Bilayer thin film structures consisting of one layer as BST (a paraelectric composition) and another layer of (Ba 1-x Sr x )TiO 3 with composition gradient [6][7][8], multiferroic [9], ferroelectric [10][11], non-ferroelectric [12][13], conducting perovskite [12,[14][15], doped multilayers of BST thin films [16] have been reported. Another interesting sandwich structure of ferroelectric thin films gained much attention due to improved electrical properties [10,[17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Mahesh

Pal

Prasad

et al. 2021

Preprint

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Multilayer thin films of (Ba0.50Sr0.50)TiO3 (BST) and Ba(Zr0.15Ti0.85)O3 (BZT) were designed and grown using Pulsed LASER Deposition technology. The periodic (BST/BZT)n thin films were deposited on Pt‹111›/SiO2/Si substrates. X-ray diﬀraction reveals the presence of a polycrystalline, perovskite structure corresponding to the bilayer thin film stacks. SEM analysis confirmed the multilayer structure without any interdiffusion across layers. It was also found that the dielectric and ferroelectric properties of the thin films are strongly influenced by the periodic hetero-structures. The thin film stacks exhibit significantly higher tunabilities, comparable with multilayer thin films grown on various single crystal substrates such as LaAlO3, MgO and SrTiO3. Possible mechanisms explaining the other observed attributes such as lower dielectric loss resulting in higher Figure of Merit (FoM), low leakage current are discussed. The effect of incorporating a comparatively lower permittivity thin film in the multilayer stacks is presented. The observed properties of such multilayer structured films help in realization of low loss and highly tunable applications.

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“…So far, applied methods of preparing BaTiO 3 thin layers such as sol-gel [1,7,15,16], sputtering [7], conventional furnace sintering [6] or assisted chemical vapor deposiContribution to the Topical Issue "13th International Symposium on High Pressure Low Temperature Plasma Chemistry (Hakone XIII)", Edited by Nicolas Gherardi, Henryca Danuta Stryczewska and Yvan Ségui.…”

Section: Introductionmentioning

confidence: 99%

Plasma deposition of thin layers containing titanium and barium with the use of DBD

Majdak

Opalińska

Wnęk

et al. 2013

Eur. Phys. J. Appl. Phys.

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Abstract. Two different methods of deposition of thin layers containing titanium and barium with the use of dielectric barrier discharge were investigated. The first was carried out in two stages. The first stage consisted in transferring compounds containing titanium and barium from the vapor of the organic precursor to the copper substrate, while the second stage involved the etching of the organic layer in oxygen. The second method consisted in transferring titanium and barium to the copper substrate from the ceramic plate made of barium titanate, which was one of the electrodes during the plasma process. The results of analysis obtained by SIMS showed directly that both methods gave a positive result in the deposition of the thin layers containing a certain amount of titanium and barium on the surface of the copper plate. However, more effective method was that involving the properties of reaction with the metallorganic precursor. FTIR study of the layers prepared from the organic precursor indirectly showed that layers deposited on the copper plate contained compounds of barium and titanium. FTIR study also revealed that during the process of etching in oxygen, the organic layer was decreased, but it was not completely removed.

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SrTiO3/BaTiO3 multilayers thin films for integrated tunable capacitors applications

Cited by 18 publications

References 15 publications

Crystal Structure and Dielectric Characterization of a (SrTiO3/BaTiO3) n Multilayer Film Prepared by Radio Frequency Magnetron Sputtering

Crystal Structure and Dielectric Characterization of a (SrTiO3/BaTiO3) n Multilayer Film Prepared by Radio Frequency Magnetron Sputtering

Improved Tunability And Energy Storage Density Properties Of Low Loss, Lead Free (Ba0.50Sr0.50)Tio3 And Ba(Zr0.15Ti0.85)O3 Bilayer Thin Film Stacks

Plasma deposition of thin layers containing titanium and barium with the use of DBD

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