Stability Analysis of Millimeter-Wave Circuits. Application to DC-40GHz PHEMT amplifier and Ku-band HBT power amplifier

Campovecchio, Michel; Nallatamby, Jean-Christophe; Mons, Sébastien; Quéré, Raymond; Pataut, G.

doi:10.1109/euma.2000.338830

Cited by 6 publications

(3 citation statements)

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“…These types of failures can be minimized by prescreening the MCM (Multi-chip Module) assembly by conducting burn in cycles under bias conditions that could include temperature cycling and vibration. Caution should be used though as burn in tests do not guarantee long life and devices exposed to too high of a temperature for too long a period could have their useful life reduced [ 14].…”

Section: Failure Mechanisms and Junction Temperaturementioning

confidence: 99%

“…It is one of the few nonlinear stability methods being used and highlights the need for commercial microwave software companies to develop time domain and harmonic balance based non-linear stability tools. NDF based nonlinear tools that rely on an extension of the specific functions for linear stability have been developed by Campovecchio and others but have not found widespread use and implementation into commercially available software packages as of yet [14].…”

Section: Spectrum Analysismentioning

confidence: 99%

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Design and analysis of an integrated pulse modulated s-band power amplifier in gallium nitride process

Sedlock

2012

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The design of power amplifiers in any semi-conductor process is not a trivial exercise and it is often encountered that the simulated solution is significantly different than the results obtained. Oscillatory phenomena occurring either in-band or out of band and sometimes at subharmonic intervals can render a design useless. Other less apparent effects such as jumps, hysteresis and continuous spectrum, often referred to as chaos, can also invalidate a design. All of these problems might have been identified through a more rigorous approach to stability analysis.Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly.Other parameters such as gain, power output, frequency response and even matching may have suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to the loss of the design there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it.The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if and | | can fail and other tools must be used to validate circuit stability.With the emphasis being placed on stability, a 1W pulse modulated S-band power amplifier is designed using a battery of analysis tools in addition to the standard Linville or Rollett criteria to rigorously confirm the stability of the circuit. Test measurements are then presented to confirm the stability of the design and illustrate the results.The research shown contributes to the state of the art by offering a detailed approach to stability design and then applying the techniques to the design of a 1W pulse modulated S-band power amplifier demonstrating the first with 20 nanosecond pulse width switching and single digit nanosecond rise and fall times at 1 Watt power levels.iv

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Section: Failure Mechanisms and Junction Temperaturementioning

confidence: 99%

Section: Spectrum Analysismentioning

confidence: 99%

Design and analysis of an integrated pulse modulated s-band power amplifier in gallium nitride process

Sedlock

2012

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“…); • simultaneous optimization of performances in the bandwidth (gain, matching, etc.) and intrinsic linear stability (NDF [11]) from DC to f max using a specific multi-port architecture derived from the 2-port amplifier [12]; • intrinsic nonlinear stability analysis using modifications of the nonlinear model (return ratio) and the generalization of the NDF method to the nonlinear case [13]; • electrothermal nonlinear simulations [14].…”

Section: Third Step: Design Guide For Power Amplifiersmentioning

confidence: 99%

Evolutive design assistance tool for microwave circuits

Dellier

Duperrier

Campovecchio

et al. 2003

Int J RF and Microwave Comp Aid Eng

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This article deals with the development of a design assistance environment for microwave circuits and, especially, its first module dedicated to microwave power amplifiers. This tool does not intend to simulate nonlinear circuits, since CAD tools are already available and reliable. Our aim is to implement efficient and predictive design processes and design re-use capabilities based on specialized knowledge databases (devices, circuits, and methods).

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Modeling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaN HEMTs technology

Meyer¹,

Philippon²,

Campovecchio³

et al. 2005

2005 European Microwave Conference

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Stability Analysis of Millimeter-Wave Circuits. Application to DC-40GHz PHEMT amplifier and Ku-band HBT power amplifier

Cited by 6 publications

References 0 publications

Design and analysis of an integrated pulse modulated s-band power amplifier in gallium nitride process

Design and analysis of an integrated pulse modulated s-band power amplifier in gallium nitride process

Evolutive design assistance tool for microwave circuits

Modeling of a 4-18GHz 6W flip-chip integrated power amplifier based on GaN HEMTs technology

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