Stability and phase transition studies of Ga–pWSe2 Schottky diode by current–voltage–temperature method

Mathai, Achamma John; Patel, K.D.; Srivastava, Ritu

doi:10.1016/j.tsf.2009.09.022

Cited by 11 publications

(2 citation statements)

References 52 publications

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“…Many researchers work on to understand the behaviors of MS junction. Major efforts are being prepared to arrive at additional realistic interpretation of Schottky diode parameters [4]. I-V measurement method has been extensively used to evaluate Schottky barrier height (SBH) and ideality factor of Schottky diode [5].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Electrical Characterizations of Cu / (n) - CdS1-xSex Thin Film Schottky Diode

Kale¹,

Attarde²,

Bhavsar³

2016

IJSRE

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The present investigation describes the preparation and electrical characterization of CdS 1-x Se x based thin film Schottky diode. The formed single Schottky barrier shows characteristics comparable to the barrier formed by change in chemical composition. The thin films were prepared by vacuum thermal evaporation method under the pressure 2 × 10-5 torr. I-V characteristics shows that the Cu makes Schottky contact with N-type CdS 1-x Se x thin film. The variation of junction current with voltage has been studied to evaluate the Schottky barrier height (ф B). The ideality factor (η) of grown Schottky diodes was found near to ideality.

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Section: Introductionmentioning

confidence: 99%

Fabrication and Electrical Characterizations of Cu / (n) - CdS1-xSex Thin Film Schottky Diode

Kale¹,

Attarde²,

Bhavsar³

2016

IJSRE

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“…Many models have been developed to understand the origins and behaviors of potential barriers at the interfaces of MS contacts. Significant efforts are being made to arrive at a more realistic interpretation of characterizing parameters of real Schottky diodes (Margaritondo, 1999;Mathai et al, 2010). Until now, the current-voltage (I-V) measurement method has been used widely to explore the trap states in the Schottky diode by evaluating the diode ideality factor (Jang et al, 2005).…”

Section: Introductionmentioning

confidence: 99%

Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures

Hattami¹,

Rathod²,

Kadash³

et al. 2013

IJTech

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Cadmium sulphide (CdS), a member of group II-VI semiconductors, is a promising material based on its applications. The present investigations describe the preparation and electrical characterization of CdS thin films. CdS thin films with thickness of 1000 nm were deposited by vacuum evaporation at room temperature. Characteristic parameters of Schottky junctions formed by a thermal vapor deposition of 500 nm of Al films on pre-coated CdS glass substrates were obtained experimentally from the I-V characteristics in the temperature range of 303-393 K. Diode parameters, such as the zero-bias barrier height φ b0 , flat band barrier height Φ bf , ideality factor η, and series resistance R S were investigated using the thermionic emission method.

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Schottky diode characteristics: Aluminium with 500 and 1000 Å thicknesses on p type WSe₂ crystal

Mathai

Patel

2010

Cryst. Res. Technol.

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The conduction properties of Al-pWSe 2 Schottky barrier diodes prepared identically but with different metal thickness are reported here. The p type WSe 2 semiconducting crystals used in the present study was grown by direct vapour transport technique. The current-voltage characteristics of these diodes were analyzed from 140 K to 300 K on the basis of thermionic emission theory applying Gaussian distribution. Below 200 K, deviations were observed in barrier height, ideality factor and Richardson plot. Hence at lower temperatures, a model has been considered where the total current is assumed to be the sum of thermionic emission, generation recombination and tunneling components. The observed deviations in the diode parameters were successfully interpreted in terms of the contribution of these multiple charge transport mechanisms across the interface of the fabricated diodes. The diode with a thickness of 500 Å Al showed more homogeneous nature than with 1000 Å.

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Stability and phase transition studies of Ga–pWSe2 Schottky diode by current–voltage–temperature method

Cited by 11 publications

References 52 publications

Fabrication and Electrical Characterizations of Cu / (n) - CdS1-xSex Thin Film Schottky Diode

Fabrication and Electrical Characterizations of Cu / (n) - CdS1-xSex Thin Film Schottky Diode

Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures

Schottky diode characteristics: Aluminium with 500 and 1000 Å thicknesses on p type WSe₂ crystal

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Stability and phase transition studies of Ga–pWSe2 Schottky diode by current–voltage–temperature method

Cited by 11 publications

References 52 publications

Fabrication and Electrical Characterizations of Cu / (n) - CdS1-xSex Thin Film Schottky Diode

Fabrication and Electrical Characterizations of Cu / (n) - CdS1-xSex Thin Film Schottky Diode

Physical Characteristics of Al/n-CdS Thin-Film Schottky Diode at High Temperatures

Schottky diode characteristics: Aluminium with 500 and 1000 Å thicknesses on p type WSe2 crystal

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Schottky diode characteristics: Aluminium with 500 and 1000 Å thicknesses on p type WSe₂ crystal