Stability of interfaces in pseudomorphic ingaas hemts

Abstract

Considerable progress is now reported on pseudomorphic InGaAs high mobility transistors (PM.HEMTs). However, structures which exhibit the best performances are thermodynamically metastable. The stabilities of commercially available devices have been studied. Investigations of both GaAdInGaAs and AIGaAdInGaAs interface vicinities have been performed through deep level characterizations. Life-testing experiments have then been carried out in order to assess the stability of the InGaAs buried strained layer and related interfaces during operation. Deep level studies together with electrical parameter measurements indicate that interfaces of InGaAs strained quantum well HEMTs do not induce particular degradations after 3000 hours into biased ageing tests.

Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing

“…1-3 Due to this wide interest, several studies concerning the reliability of these devices have been recently published. [4][5][6][7][8][9][10][11][12] In particular, reliability problems due to hot carriers can represent a threat, [4][5][6][7]11 and can originate both recoverable and permanent failure modes, depending on device technology and fabrication characteristics.…”