Stable Electron Concentration Si-doped β-Ga2O3 Films Homoepitaxial Growth by MOCVD

Abstract

To obtain high-quality n-type doped β-Ga2O3 films, silane was used as an n-type dopant to grow Si-doped β-Ga2O3 films on (100) β-Ga2O3 substrates by metal-organic chemical vapor deposition (MOCVD). The electron concentrations of the Si-doped β-Ga2O3 films obtained through experiments can be stably controlled in the range of 6.5 × 1016 cm−3 to 2.6 × 1019 cm−3, and the ionization energy of Si donors is about 30 meV, as determined by analysis and calculation. The full width at half maxima of the rocking curves of the (400) crystal plane of all doped films was less than 500 arcsec, thus showing high crystal quality, while the increase of the doping concentration increased the defect density in the β-Ga2O3 films, which had an adverse effect on the crystal quality and surface morphology of the films. Compared with heteroepitaxial Si-doped β-Ga2O3 films, homoepitaxial Si-doped β-Ga2O3 films exhibited higher quality, lower defect density, and more stable electron concentration, which make them more conductive for preparing Ga2O3-based power devices.

Recent advances in self‐powered and flexible UVC photodetectors

“…[134] Among them, β-Ga 2 O 3 has a bandgap of approximately 4.7 to 4.9 eV at room temperature, and it is assumed to be stable compared to other isomers. [135,136] Considerable research has been conducted on Ga 2 O 3 -based UV detectors.…”

Study and characterization of the nanotextured Ga2O3-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

“…The high breakdown field exhibited by Ga 2 O 3 of 8 MV cm −1 also makes it a good alternative as an electrical insulator [20]. Material implementation could be used by exploring techniques such as epitaxial growth and thermal oxidation (TO) of Ga-based wafers to obtain Ga 2 O 3 [21,22]. TO of Ga-based wafers such as gallium nitride and gallium arsenide (GaAs) wafers have been studied to prepare Ga 2 O 3 due to the autogenous supply, which results in the high efficiency of the fabrication process [23].…”

Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

“…Furthermore, large-sized Ga 2 O 3 single crystals can be directly obtained by melt growth, which facilitates the homoepitaxy of high-quality Ga 2 O 3 films, thereby greatly improving the device's performance [6][7][8]. Common vapor deposition, such as halide vapor phase epitaxy (HVPE) [9], magnetron sputtering [10], MOCVD [11,12], mist-CVD [13], molecular beam epitaxy (MBE) [14], etc., can be adopted for the growth of Ga 2 O 3 films, also accelerating the application of Ga 2 O 3 devices. Currently, Ga 2 O 3 power rectifiers are mainly based on Schottky barrier diodes (SBDs) and heterojunction diodes (HJDs) [5,[15][16][17][18][19].…”