Stable Visible Photo- and Electroluminescence from Nanocrystalline Silicon Thin Films Fabricated on Thin SiO2 Layers by Low Pressure Chemical Vapour Deposition

Nassiopoulou, A. G.; Ioannou‐Sougleridis, V.; Photopoulos, P.; Travlos, A.; Tsakiri, V.; Papadimitriou, D.

doi:10.1002/(sici)1521-396x(199801)165:1<79::aid-pssa79>3.0.co;2-f

Cited by 36 publications

(14 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The luminescence is generated by quantum connement effect due to the nano-scaled grain size. 22,24 The grain size information gained from PL characterization also agrees well with Raman spectra results.…”

Section: Resultssupporting

confidence: 77%

High rate deposition of nanocrystalline silicon by thermal plasma enhanced CVD

2013

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 77%

High rate deposition of nanocrystalline silicon by thermal plasma enhanced CVD

2013

View full text Add to dashboard Cite

“…The temperature during Si LPCVD influences strongly the crystallinity of the deposited Si layer. Low temperature depositions favour the formation of amorphous Si films, while at high deposition temperatures the deposited Si is polycrystalline [13]. The variation of the crystallinity of the deposited Si layer with deposition temperature implies that the oxidation rate of LPCVD Si will vary across the three sets of samples fabricated.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence from SiO₂/Si/SiO₂structures

Photopoulos¹,

Nassiopoulou

2003

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Si layers were developed on pre-oxidized Si wafers by decomposition of silane in a low pressure chemical vapour deposition reactor. By keeping the deposition time constant (2 min) three sets of samples were fabricated at deposition temperatures equal to 580, 610 and 625 • C. The deposited Si layers were thinned by high temperature dry oxidation thus forming SiO 2 /Si/SiO 2 structures. Room temperature photoluminescence (PL) measurements showed that for those samples in which the thickness of the remaining Si layer was greater than ∼6 nm, the spectra exhibited a peak at ∼650 nm. Prolonged oxidations led to the formation of SiO 2 /nanocrystalline-Si/SiO 2 structures in which the thickness of the remaining nanocrystalline Si (nc-Si) layer was smaller than 3 nm. The PL spectra obtained from these structures were at least ten times stronger compared to the previous ones. The PL peak wavelength exhibited a weak dependence on the nc-Si layer thickness shifting from 800 to 720 nm for nc-Si thickness decreasing from ∼3 to ∼0.5 nm. In this publication we present our experimental findings, which indicate that the intensity of the 720-800 nm PL band is influenced by the deposition temperature of the initial Si layer and by the thickness of the oxide layer between the nc-Si layer and the Si substrate.

show abstract

“…The fabrication of Si/SiO 2 QWs has been an attractive area in process technology of Si-based light-emitting devices in last few decades. Various techniques are developed to synthesize the Si/SiO 2 nanostructured films-molecular beam epitaxy (MBE) [32][33][34][35][36][37], plasma-enhanced chemical vapor deposition (PECVD) [38][39][40][41][42][43][44][45][46][47][48][49], magnetron sputtering [50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65], electrochemical dissolution in electrolytes, ion implantation, and others. In this chapter, we investigate the growth of amorphous Si/SiO 2 QWs employing an ultrahigh vacuum (UHV) radio frequency (RF) magnetron sputtering (MS) system.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured Si/SiO2 Quantum Wells

Takeuchi¹,

Horíkoshi²

2019

Nanostructures in Energy Generation, Transmission and Storage

View full text Add to dashboard Cite

The motivation for developing light-emitting devices on an indirect transition semiconductor such as silicon has been widely discussed for Si/SiO 2 nanostructures. In this chapter, we report on the fabrication of Si/SiO 2 quantum-confined amorphous nanostructured films and their optical properties. The Si/SiO 2 nanostructures comprising amorphous Si, SiO 2 , and Si/SiO 2 multilayers are grown using ultrahigh vacuum radio frequency magnetron sputtering. Optical absorption coefficients of the Si/SiO 2 nanostructures are evaluated with regard to tentative integrated Si thicknesses. Optical energy band gaps of the Si/SiO 2 multilayer films are in accordance with the effective mass theory and described as E 0 = 1.61 + 0.75d −2 eV at the Si layer-integrated thicknesses ranging from 0.5 to 6 nm. Quantum confinement effects in the Si/SiO 2 nanostructures are inferred from optical transmittance and reflectance spectra. The rapid-thermal-annealed Si/SiO 2 multilayer films demonstrate the intensified photoluminescence at ~1.45 eV due to the formation of nanocrystalline silicon. The temperature dependence of the nanocrystalline luminescence intensity shows the nonmonotonous behavior which is interpreted invoking the Kapoor model.

show abstract

Stable Visible Photo- and Electroluminescence from Nanocrystalline Silicon Thin Films Fabricated on Thin SiO2 Layers by Low Pressure Chemical Vapour Deposition

Cited by 36 publications

References 8 publications

High rate deposition of nanocrystalline silicon by thermal plasma enhanced CVD

High rate deposition of nanocrystalline silicon by thermal plasma enhanced CVD

Photoluminescence from SiO₂/Si/SiO₂structures

Nanostructured Si/SiO2 Quantum Wells

Contact Info

Product

Resources

About

Stable Visible Photo- and Electroluminescence from Nanocrystalline Silicon Thin Films Fabricated on Thin SiO2 Layers by Low Pressure Chemical Vapour Deposition

Cited by 36 publications

References 8 publications

High rate deposition of nanocrystalline silicon by thermal plasma enhanced CVD

High rate deposition of nanocrystalline silicon by thermal plasma enhanced CVD

Photoluminescence from SiO2/Si/SiO2structures

Nanostructured Si/SiO2 Quantum Wells

Contact Info

Product

Resources

About

Photoluminescence from SiO₂/Si/SiO₂structures