Stacking-mode confined growth of 2H-MoTe2/MoS2 bilayer heterostructures for UV–vis–IR photodetectors

Ding, Yao; Zhou, Nan; Gan, Lin; Yan, Xingxu; Wu, Ren‐Jang; Abidi, Irfan Haider; Waleed, Aashir; Pan, Jie; Ou, Xuewu; Zhang, Qicheng; Zhuang, Minghao; Wang, Peng; Pan, Xiaoqing; Fan, Zhiyong; Zhai, Tianyou

doi:10.1016/j.nanoen.2018.04.055

Cited by 104 publications

(92 citation statements)

References 54 publications

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“…A considerable number of blue photons can be absorbed in 7 nm thick MoTe 2 , and most of the IR and red photons pass through the thin layer. These results are comparable to those of general 2D‐like thin TMD photodetectors . For PIN‐mode operation, this photoresponse behavior should maintain a similar shape, although an enhanced responsivity profile is, of course, expected throughout the entire measurement range.…”

Section: Spectral Responsivity Of 2d‐layered Tmd‐ and Bp‐based Devicessupporting

confidence: 80%

“…A variety of 2D field‐effect transistors (FETs) and heterojunction PN diodes have been reported as examples of device applications, using representative TMD semiconductors: MoS 2 , WSe 2 , MoTe 2 , and ReSe 2 . Reports on PN junction diodes have primarily focused on type‐II‐based heterojunction diodes, but homojunction PN diodes using 2D‐layered materials are still rare although they enable seamless integration . Recently, hydrogen (H)‐doped n‐channel MoTe 2 , produced by atomic layer deposition (ALD) on top of a p‐type MoTe 2 surface, was reported .…”

Section: Spectral Responsivity Of 2d‐layered Tmd‐ and Bp‐based Devicesmentioning

confidence: 99%

“…In fact, because of its smaller bandgap (<1 eV) compared with Si, a MoTe 2 ‐based device with a thickness on the order of nanometers can potentially be applied for short‐wave infrared (SWIR) detection in the range of even greater than ≈1100 nm, a wavelength range that Si‐based devices cannot properly address. This detection may be an essential application justifying the usefulness of 2D‐layered TMDs beyond Si‐based photodetectors …”

Section: Spectral Responsivity Of 2d‐layered Tmd‐ and Bp‐based Devicesmentioning

confidence: 99%

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Seamless MoTe₂ Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection

Lee

Lim

et al. 2019

Advanced Optical Materials

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Homojunction PN and PIN diodes based on 2D transition metal dichalcogenide (TMD) MoTe2 are reported in this work. Up to date, for PN junction diodes, type II‐based heterojunction diodes are mainly seen in report, but homojunction PN diodes using 2D‐layered materials are still rare although they enable seamless integration. Recently, hydrogen (H)‐doped n‐type MoTe2, achieved via atomic layer deposition (ALD) on top of a p‐type MoTe2 surface, was reported. Consequently, a lateral homojunction PN diode was realized by H‐doping. In fact, MoTe2‐based devices with a thickness on the order of nanometers can be applied for short‐wave infrared (SWIR) detection in the range of ≈1300 nm, a wavelength that Si‐based devices cannot properly address. Here, a seamless MoTe2 homojunction PIN diode is demonstrated, achieving the detection of visible to 1300 nm SWIR photons. This thin MoTe2 initially forms a PN junction by selective H‐doping, but a PIN diode is even obtained using two split gates. Compared to the PN diode mode, the PIN mode greatly enhances the photoresponse in the visible to 1300 nm wavelength range because of the increased built‐in electric field. The Franz–Keldysh effect is regarded strongly responsible for the effective absorption of 1300 nm SWIR photons in MoTe2. It is anticipated that this development may support Si photodetectors for integration on Si devices.

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Section: Spectral Responsivity Of 2d‐layered Tmd‐ and Bp‐based Devicessupporting

confidence: 80%

Section: Spectral Responsivity Of 2d‐layered Tmd‐ and Bp‐based Devicesmentioning

confidence: 99%

Section: Spectral Responsivity Of 2d‐layered Tmd‐ and Bp‐based Devicesmentioning

confidence: 99%

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Seamless MoTe₂ Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection

Lee

Lim

et al. 2019

Advanced Optical Materials

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“…The formatted MoTe 2 /MoS 2 type-II band alignment exhibits a better SA response compared with the pure nanofilms at the same experimental condition. [53] Figure 7d shows atomic force microscope (AFM) image of MoTe 2 /MoS 2 nanocomposite film with a filtration volume of 100 mL, which is ≈120 nm in thickness. The physical details of the band alignment and the significant enhanced NLO properties of the MoTe 2 /MoS 2 nanocomposite films demonstrate a potential in the development of optic devices based on mixed heterostructures.…”

Section: Discussionmentioning

confidence: 99%

Band Alignment of MoTe₂/MoS₂ Nanocomposite Films for Enhanced Nonlinear Optical Performance

Quan

et al. 2019

Adv Materials Inter

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Band alignment is a key issue for the optoelectronics based on 2D layered transition metal dichalcogenides (TMDs) heterostructures. Herein, band alignment of MoTe2/MoS2 mixed heterostructure is measured with high‐resolution X‐ray photoelectron spectroscopy. The MoTe2/MoS2 heterostructure belongs to type‐II heterostructure with the conduction band offset of 0.46 eV and the valence band offset of 0.9 eV. The stronger saturable absorption is observed in MoTe2/MoS2 heterostructure film compared with that of pure MoTe2 and MoS2 nanofilms at the same condition. An energy‐level model combined with Runge–Kutta algorithm is used to understand the enhancement mechanism. It is found that the interlayer transition from MoTe2/MoS2 heterojunction plays an important role in the nonlinear optical enhancement. Meanwhile, band structure of MoTe2/MoS2 heterostructure is calculated by the first principles. The contributions of the MoTe2 and MoS2 to the heterojunction are almost equal and the valence band maximum and conduction band minimum exist in MoTe2 and MoS2 separately. This structure can form the interlayer carriers easily. The results suggest that the band alignment of TMDs paves the way for the type‐II heterostructure for enhanced nonlinear response in the development of optical modulator, ultrafast laser mode lockers, saturable absorbers, and optical switches.

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“…The fast development of nanomaterials presents a great opportunity to meet this requirement. 2D materials such as graphene that have excellent carrier mobility can be integrated with bulk material via transfer technologies . 0D materials such as IV–VI group quantum dots show excellent light harvesting capability in the infrared region and can be conveniently integrated with silicon substrates via a solution process .…”

Section: Introductionmentioning

confidence: 99%

Ambipolar Graphene–Quantum Dot Phototransistors with CMOS Compatibility

Zheng

Zhou

Ning

et al. 2018

Advanced Optical Materials

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The hybridization of 2D materials and colloidal quantum dots (CQDs) has been demonstrated to be an ideal platform for infrared photodetectors due to the high mobility of 2D materials and the excellent light harvesting capability of CQDs. However, the realization of ambipolar, broadband, and room‐temperature graphene–quantum dot phototransistors with complementary metal–oxide–semiconductor (CMOS) compatibility remains challenging. Here N, S codecorated graphene is deposited with PbS CQDs to fabricate a hybrid phototransistor on a silicon dioxide/silicon gate. The resulting device demonstrates a gate‐tuneable ambipolar feature with a low gate bias of less than 3.3 V at room temperature in ambient. Broadband spectra from visible to near‐infrared and to short wave infrared (SWIR) light can be detected with gain value of up to 105 and a fast response of 3 ms. Upon illumination by SWIR light at 1550 nm, the phototransistor exhibits an ultrahigh responsivity that is on the order of 104 AW−1 and a specific detectivity that is on the order of 1012 Jones with a low driving voltage of 1 V. This decorated hybrid architecture illustrates the potential of graphene and CQDs to be integrated with silicon integrated circuits and opens a new path toward ambipolar photodetector fabrication.

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Stacking-mode confined growth of 2H-MoTe2/MoS2 bilayer heterostructures for UV–vis–IR photodetectors

Cited by 104 publications

References 54 publications

Seamless MoTe₂ Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection

Seamless MoTe₂ Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection

Band Alignment of MoTe₂/MoS₂ Nanocomposite Films for Enhanced Nonlinear Optical Performance

Ambipolar Graphene–Quantum Dot Phototransistors with CMOS Compatibility

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Stacking-mode confined growth of 2H-MoTe2/MoS2 bilayer heterostructures for UV–vis–IR photodetectors

Cited by 104 publications

References 54 publications

Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection

Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection

Band Alignment of MoTe2/MoS2 Nanocomposite Films for Enhanced Nonlinear Optical Performance

Ambipolar Graphene–Quantum Dot Phototransistors with CMOS Compatibility

Contact Info

Product

Resources

About

Seamless MoTe₂ Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection

Seamless MoTe₂ Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection

Band Alignment of MoTe₂/MoS₂ Nanocomposite Films for Enhanced Nonlinear Optical Performance