Standard x-ray diffraction powder patterns :

Morris, Marlene C.; McMurdie, Howard F.; Evans, Eloise H.; Paretzkin, Boris; Parker, H.S.; Panagiotopoulos, N. C.; Hubbard, Camden R.

doi:10.6028/nbs.mono.25-18

Cited by 74 publications

(38 citation statements)

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“…Assuming a characteristic for stoichiometric Bi 2 Se 3 rhombohedral crystal structure in the space group R 3m with the unit cell lattice constants a * 4.140 Å and c * 28.636 Å [14], this lattice spacing of corresponds to the (101) atomic plane [30]. Thus, the growth direction of aligned under angle relative to the substrate nanoplate was determined to be [101], which is at slope angle of 82°relative to the (001) plane and, respectively, to the substrate surface [30].…”

Section: Resultsmentioning

confidence: 99%

Vapor–solid synthesis and enhanced thermoelectric properties of non-planar bismuth selenide nanoplates on graphene substrate

et al. 2016

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In this work, stoichiometric separate bismuth selenide (Bi 2 Se 3 ) nanoplates and continuous Bi 2 Se 3 coatings are synthesized on graphene substrate by catalystfree vapor-solid deposition method. The orientation of synthesized nanoplates relative to the substrate surface varies from heteroepitaxial (planar) to oriented under different angles (non-planar). The non-planar growth of the nanoplates was achieved for the first time by short-term carrier inert gas flow in certain temperature interval of the synthesis process. The crystallographic growth directions of non-planar nanoplates were determined from HRTEM images as well as estimated from the slope angles of non-planar nanoplates. Bi 2 Se 3 coatings consisting of combination of planar and non-planar nanoplates exhibit significantly enhanced in comparison with coating consisting of only planar coalescent Bi 2 Se 3 nanoplates thermoelectric properties. Demonstrated graphene/Bi 2 Se 3 /graphene devices may find applications in thermoelectric and photo-detection sensors.

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Section: Resultsmentioning

confidence: 99%

Vapor–solid synthesis and enhanced thermoelectric properties of non-planar bismuth selenide nanoplates on graphene substrate

et al. 2016

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“…Transformation from orthorhombic lattice parameters to pseudocubic lattice parameters Bulk NaNbO 3 crystallizes at RT in the P phase with orthorhombic crystal symmetry (a o ¼ 5.569 Å , b o ¼ 5.505 Å , and c o ¼ 15.523 Å , 36 Pbcm setting). However, for the description of non-cubic perovskite materials, the lattice parameters are often given in pseudocubic notation.…”

Section: Experimental Film Deposition and Characterizationmentioning

confidence: 99%

Ferroelectric domain structure of anisotropically strained NaNbO3 epitaxial thin films

Schwarzkopf

Braun

Schmidbauer

et al. 2014

Journal of Applied Physics

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NaNbO3 thin films have been grown under anisotropic biaxial strain on several oxide substrates by liquid-delivery spin metalorganic chemical vapor deposition. Compressive lattice strain of different magnitude, induced by the deposition of NaNbO3 films with varying film thickness on NdGaO3 single crystalline substrates, leads to modifications of film orientation and phase symmetry, which are similar to the phase transitions in Pb-containing oxides near the morphotropic phase boundary. Piezoresponse force microscopy measurements exhibit large out-of-plane polarization components, but no distinctive domain structure, while C-V measurements indicate relaxor properties in these films. When tensile strain is provoked by the epitaxial growth on DyScO3, TbScO3, and GdScO3 single crystalline substrates, NaNbO3 films behave rather like a normal ferroelectric. The application of these rare-earth scandate substrates yields well-ordered ferroelectric stripe domains of the type a1/a2 with coherent domain walls aligned along the [001] substrate direction as long as the films are fully strained. With increasing plastic lattice relaxation, initially, a 2D domain pattern with still exclusively in-plane electric polarization, and finally, domains with in-plane and out-of-plane polar components evolve.

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“…Finally, the electrodes and ceramic thermocouple rod were lowered into the melt at a 4 cm and 3 cm depth respectively at T ∼ 950 • C before applying a rising-ramped voltage regime (−2·0 to −3.2 V). Figure 1 shows the size-strain analysis of TiC 1−x crystals where the Bragg peaks in XRD spectra can be indexed 1 1 1, 2 0 0, 2 2 0, 3 1 1 and 2 2 2 [13]. Crystallite size broadening ˇ at Bragg angle Â for TiC 1−x is related to the mean crystallite dimension by the Scherrer equation.…”

Section: Methodsmentioning

confidence: 99%