1987
DOI: 10.1109/tmag.1987.1065443
|View full text |Cite
|
Sign up to set email alerts
|

Standing spinwaves in FeMn/NiFe/FeMn exchange-bias structures

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
21
0
1

Year Published

1990
1990
2020
2020

Publication Types

Select...
5
2
1

Relationship

0
8

Authors

Journals

citations
Cited by 43 publications
(23 citation statements)
references
References 8 publications
1
21
0
1
Order By: Relevance
“…4). This linear correlation between the line width and the 1/t NiFe values has also been reported in NiFe/FeMn based EB systems [21] and is attributed to the interfacial nature of the exchange coupling; however, any correlation with the interface structure (i.e. interface roughness) has not been investigated.…”
Section: Nife Thicknesssupporting
confidence: 64%
“…4). This linear correlation between the line width and the 1/t NiFe values has also been reported in NiFe/FeMn based EB systems [21] and is attributed to the interfacial nature of the exchange coupling; however, any correlation with the interface structure (i.e. interface roughness) has not been investigated.…”
Section: Nife Thicknesssupporting
confidence: 64%
“…Commonly, the exchange biased thin film exhibits larger line broadening than that of unbiased single layer thin film [9]. It was reported that the line broadening of exchange biased film is caused by a local pinning of FM layer due to an inhomogeneous surface anisotropy based on Malozemoff's model [10]. Thus, the amount of line broadening varies in proportion to exchange coupling strength.…”
Section: Resultsmentioning
confidence: 99%
“…Commonly, exchange-biased thin film exhibits larger line broadening than that of unbiased single layer thin film [6]. Speriosu et al reported that the line broadening of exchange-biased film is caused from a local pinning of the FM layer due to an inhomogeneous surface anisotropy based on Malozemoff's model [11]. So, the amount of line broadening varies in proportion to exchange bias strength in FM/AFM thin film.…”
Section: Resultsmentioning
confidence: 99%