Static and dynamic characteristics of L g 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

Murugapandiyan, P.; Ravimaran, S.; Jo, William

doi:10.1016/j.jsamd.2017.08.004

Cited by 8 publications

(5 citation statements)

References 25 publications

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“…In most cases, GaN transistors are based on AlGaN/GaN heterostructures, and AlN and AlGaN layers are used as nucleation and buffer layers respectively. InAlN devices have also been investigated: lattice matched InAlN/GaN HEMTs allow an efficient down-scaling of the transistor dimensions, thus allowing to reach high cut-off frequencies [38].…”

Section: Gallium Nitride: Properties and Physical Parametersmentioning

confidence: 99%

GaN-based power devices: Physics, reliability, and perspectives

Meneghini

Santi

Abid

et al. 2021

Journal of Applied Physics

342

126

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Over the last decade, gallium nitride has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available on the market, GaN has the widest energy gap, the largest critical field, the highest saturation velocity, thus representing an excellent material for the fabrication of high speed/high voltage components.The presence of spontaneous and piezoelectric polarization allows to create a 2-dimensional electron gas, with high mobility and large channel density, in absence of any doping, thanks to the use of AlGaN/GaN heterostructures. This contributes to minimize resistive losses; at the same time, for GaN transistors switching losses are very low, thanks to the small parasitic capacitances and switching charges. Device scaling and monolithic integration enable high frequency operation, with consequent advantages in terms of miniaturization.For high power/high voltage operation, vertical device architectures are being proposed and investigated, and 3-dimensional structuresfin-shaped, trench-structured, nanowire-basedare demonstrating a great potential. Contrary to silicon, GaN is a relatively young material: trapping and degradation processes must be understood and described in detail, with the aim of optimizing device stability and reliability. This tutorial paper describes the physics, technology and reliability of GaN-based power devices: in the first part of the article, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail, to provide guidance in this complex and interesting field. The second part of the paper focuses on trapping and reliability aspects: the physical origin of traps in GaN, and the main degradation mechanisms are discussed in detail. The wide set of referenced papers and the insight on the most relevant aspects gives the reader a comprehensive overview on present and next-generation GaN electronics. IntroductionOver the past decade, gallium nitride has emerged as an excellent material for the fabrication of power semiconductor devices. Thanks to the unique properties of GaN, diodes and transistors based on this material have excellent performance, compared to their silicon counterparts, and are expected to find wide application in the next-generation power converters. Owing to the flexibility and the energy efficiency of GaN-based power converters, the interest towards this technology is rapidly growing: the aim of this tutorial is to review the most relevant physical properties, the operating principles, the fabrication parameters, and the stability/reliability issues of GaN-based power transistors. For introductory purposes, we start summarizing the physical reasons why GaN transistors achieve a much better performance than the corresponding silicon devices, to help the reader understanding the unique advantages of this technology.The properties of GaN devices allow the fabrication of high-efficiency (near or above 99 %)...

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Section: Gallium Nitride: Properties and Physical Parametersmentioning

confidence: 99%

GaN-based power devices: Physics, reliability, and perspectives

Meneghini

Santi

Abid

et al. 2021

Journal of Applied Physics

342

126

View full text Add to dashboard Cite

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“…An additional AlGaN layer below the GaN channel can be used as an insulating BB [9][10][11][12][13][14][15], see figure 2(b). The composition and thickness of the BB has to be correctly selected so that it serves as sufficient protection against the penetration of electrons into deeper layers of the heterostructure.…”

Section: Hemt Structures With Algan Bb-simulationsmentioning

confidence: 99%

“…Recently, many articles have been devoted to HEMT structure design improved by the introduction of AlGaN back barrier (BB) layer [9][10][11][12][13][14][15]. AlGaN has been used as a buffer layer of HEMT structures for a long time, especially for growth on Si substrates.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, AlGaN BB was suggested to separate electrons in two dimensional electron gas (2DEG) from traps in buffer layers and improve transistor characteristics, such as increased I on /I off ratio and suppressed leakage current [9], enhanced power performance [10], increased drain current (700 mA mm −1 ), improved transconductance (143 mS mm −1 ), suppressed current collapse (12%) [11] or in complex, increased Johnson figure of merit [12]. AlGaN BB also helps to improve the short-channel problem when InAlN barrier is used [13]. The graded composition of BB suppressed the parasitic channel influence formed under the BB [14].…”

Section: Introductionmentioning

confidence: 99%

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Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

Hájek¹,

Hospodková²,

Hubı́k³

et al. 2021

Semicond. Sci. Technol.

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The influence of dislocation density on the transport properties of high electron mobility transistor (HEMT) structures is reported in this work. Experimental results, obtained on HEMT structures prepared in the same growth run on templates with different dislocation densities, are compared. However, the direct comparison of structures is complicated, since parallel parasitic currents through deeper parts of the heterostructure were observed in samples with lower dislocation density. To suppress this phenomenon, the addition of an AlGaN back barrier (BB) beneath the two dimensional electron gas (2DEG) channel is proposed and optimized and the most suitable design based on both modeling and experimental results is suggested. Subsequently, the comparison of electron mobility in 2DEG for structures with AlGaN BB and different dislocation densities was possible. We show experimentally that lowering the dislocation density considerably increases the electron mobility in 2DEG. It is shown that the dislocation density also has a significant influence on the Fermi level position in GaN. The presented results suggest that reduction of dislocation density can improve the performance of high-frequency GaN HEMT applications.

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“…Major research is focused on modeling of different structure of HEMT. In that GaN, HEMTs have good efficiency for microwave devices . A GaN material capable to withstand higher breakdown voltage with polarization‐induced charge carrier density to achieve higher channel current density at higher operating voltages.…”

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method

S¹,

Balamurugan²

2019

Int J Numerical Modelling

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A model for a dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor has been developed by a finite difference method. The method permits the modeling of dual material as two individual single materials by splitting the 2‐D Poisson equation into two separate 1‐D equations. The unified model of two separate 1‐D equations is formed by applying the boundary conditions. The proposed model estimates the surface potential, electric field, threshold voltage, and drain current by considering the work functions of two metal gates, their length difference, and applied drain voltage. The accuracy of the model can be verified using Technology Computer‐Aided Design (TCAD) simulations.

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Static and dynamic characteristics of L g 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

Cited by 8 publications

References 25 publications

GaN-based power devices: Physics, reliability, and perspectives

GaN-based power devices: Physics, reliability, and perspectives

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

Modeling and simulation of dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor using finite difference method

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