Statistics of nucleation associated with the growth of whisker nanocrystals

Sibirev, N. V.

doi:10.1134/s1063785013070237

Cited by 9 publications

(8 citation statements)

References 15 publications

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“…Therefore, one can assume that the time needed to fill the ML is much shorter than the refill time [10,14,29]. Let V be the average growth rate of a NW and N * the mean number of feeding atoms in the droplet that corresponds to the growth rate V. We then introduce the 4 deviation of the actual number of atoms in the droplet from the mean value according to n=N-N * , referred to as the number of atoms in the droplet for brevity).…”

Section: Modelmentioning

confidence: 99%

“…Let V be the average growth rate of a NW and N * the mean number of feeding atoms in the droplet that corresponds to the growth rate V. We then introduce the 4 deviation of the actual number of atoms in the droplet from the mean value according to n=N-N * , referred to as the number of atoms in the droplet for brevity). Due to a very steep exponential dependence of the nucleation probability density p(n) on the number of atoms n, the p(n) can be put as [6,14,29] …”

Section: Modelmentioning

confidence: 99%

“…Most theoretical models consider VLS growth of NWs as a steadystate process at a time-independent supersaturation [5,6,9,17,28]. In this case, 2D nucleation events occur randomly and independently of each other [10,14,29]. This should lead to the Poissonian distribution over the NW lengths, which broadens very rapidly with growth time.…”

Section: Introductionmentioning

confidence: 99%

“…While there is no way to directly measure the time-dependent supersaturation during growth, its oscillatory behavior 3 has been demonstrated indirectly [10,24,30]. Such an anti-correlation is specific only for significantly small droplets: the narrowing effect gradually disappears as the droplet size increases [29]. This paper is devoted to a detailed theoretical description of nucleation statistics during the VLS growth of NWs in the mononuclear regime.…”

Section: Introductionmentioning

confidence: 99%

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Modeling the nucleation statistics in vapor–liquid–solid nanowires

Sibirev

Назаренко

Zeze

et al. 2014

Journal of Crystal Growth

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The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Abstract: The statistics of nucleation events in nanowires growing via the vapor-liquid-solid mechanism in the mononuclear regime is studied theoretically. A semi-analytical model is developed which is capable of describing the distributions of time intervals between the successive nucleation events and some other useful characteristics of nucleation statistics. Very importantly, our model accounts for desorption from the droplet, which was not included in the previous studies. It is shown that the relative dispersion of nucleation distributions increases with the nanowire radius and at a higher desorption rate from the droplet, leading to the corresponding broadening of the length distribution. Using the model is also shown to fit well experimental data available on nucleation statistics in the Au-catalyzed Si and III-V nanowires.We proposed theoretical model of nucleation during the VLS growth of nanowires in the mononuclear regimeThe model accounts for desorption from the droplet and allows one to describe the nucleation statistics and the nanowire length distribution.It was shown that the relative dispersion of nanowire length increases with the NW radius and at a higher desorption from the droplet. *Highlights (for review) AbstractThe statistics of nucleation events in nanowires growing via the vapor-liquid-solid mechanism in the mononuclear regime is studied theoretically. A semi-analytical model is developed which is capable of describing the distributions of time intervals between the successive nucleation events and some other useful characteristics of nucleation statistics. Very importantly, our model accounts for desorption from the droplet, which was not included in the previous studies. It is shown that the relative dispersion of nucleation distributions increases with the nanowire radius and at a higher desorption rate from the droplet, leading to the corresponding broadening of the length distribution. Using the model is also shown to fit well experimental data available on nucleation statistics in the Au-catalyzed Si and III-V nanowires. AbstractThe statistics of nucleation events in nanowires growing via the vapor-liquid-solid mechanism in the mononuclear regime is studied theoretically. A semi-analytical model is developed which is capable of describing the distributions of time intervals between the successive nucleation events and some other useful characteristics of nucleation statistics. Very importantly, our model accounts for desorption from the droplet, which w...

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Section: Modelmentioning

confidence: 99%

Section: Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Modeling the nucleation statistics in vapor–liquid–solid nanowires

Sibirev

Назаренко

Zeze

et al. 2014

Journal of Crystal Growth

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“…After the chemical etching of ONSs, formed on the surface of GaAs epitaxial structure by the LAO method, it is possible to create profiled nanoscale structures (PNSs) as a centers for localizing quantum dots growth [35][36][37][38], nanowires [39,40], and also antilattices used in the development of the element base of quantum computers [41]. For the manufacture of such structures, it is necessary to form ONS and then PNS on the GaAs surface with specified geometric parameters.…”

Section: Introductionmentioning

confidence: 99%

Resistive Switching of GaAs Oxide Nanostructures

et al. 2020

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The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide with an impurity concentration of 5 × 1017 cm−3. X-ray photoelectron spectroscopy measurements showed that GaAs oxide consists of oxide phases Ga2O3 and As2O3, and the thickness of the Ga2O3 layer is 2–3 times greater than the thickness of As2O3 area—i.e., the oxidized GaAs region consists mainly of Ga2O3. The experimental studies of the influence of ONS thickness on the resistive switching effect were obtained. An increase in the ONS thickness from 0.8 ± 0.3 to 7.6 ± 0.6 nm leads to an increase in the switching voltage Uset from 2.8 ± 0.3 to 6.8 ± 0.9 V. The results can be used in the development of technological processes for the manufacturing of nano-electronic elements, such as ReRAM, as well as a high-efficiency quantum dot laser.

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Sub-Poissonian Narrowing of Length Distributions Realized in Ga-Catalyzed GaAs Nanowires

et al. 2017

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Herein, we present experimental data on the record length uniformity within the ensembles of semiconductor nanowires. The length distributions of Ga-catalyzed GaAs nanowires obtained by cost-effective lithography-free technique on silicon substrates systematically feature a pronounced sub-Poissonian character. For example, nanowires with the mean length ⟨L⟩ of 2480 nm show a length distribution variance of only 367 nm, which is more than twice smaller than the Poisson variance h⟨L⟩ of 808 nm for this mean length (with h = 0.326 nm as the height of GaAs monolayer). For 5125 nm mean length, the measured variance is 1200 nm against 1671 nm for Poisson distribution. A supporting model to explain the experimental findings is proposed. We speculate that the fluctuation-induced broadening of the length distribution is suppressed by nucleation antibunching, the effect which is commonly observed in individual vapor-liquid-solid nanowires but has never been seen for their ensembles. Without kinetic fluctuations, the two remaining effects contributing to the length distribution width are the nucleation randomness for nanowires emerging from the substrate and the shadowing effect on long enough nanowires. This explains an interesting time evolution of the variance that saturates after a short incubation stage but then starts increasing again due to shadowing, remaining, however, smaller than the Poisson value for a sufficiently long time.

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Statistics of nucleation associated with the growth of whisker nanocrystals

Cited by 9 publications

References 15 publications

Modeling the nucleation statistics in vapor–liquid–solid nanowires

Modeling the nucleation statistics in vapor–liquid–solid nanowires

Resistive Switching of GaAs Oxide Nanostructures

Sub-Poissonian Narrowing of Length Distributions Realized in Ga-Catalyzed GaAs Nanowires

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