Status of Reliability of GaN-Based Heterojunction Field Effect Transistors

Leach, J. H.; Morkoç̌, H.

doi:10.1109/jproc.2010.2044858

Cited by 34 publications

(26 citation statements)

References 83 publications

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“…10 Following this understanding, regarding the reliability of AlGaN/ GaN HFETs, degradation at the gate edge has been recognized as the only degradation mechanism regardless of whether onstress or off-stress is applied. [11][12][13][14] In short, the reported trapping and degradation mechanisms of AlGaN/GaN HFETs have mainly focused on the gate edge. Actually, this is reasonable since the highest electric field always exists there regardless of the type of stress.…”

Section: Introductionmentioning

confidence: 99%

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Hu¹,

Hashizume²

2012

Journal of Applied Physics

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Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors Appl. Phys. Lett. 100, 223504 (2012) Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer Appl. Phys. Lett. 100, 223502 (2012) Charge transport and trap characterization in individual GaSb nanowires J. Appl. Phys. 111, 104515 (2012) The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors Appl. Phys. Lett. 100, 222901 (2012) Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor J. Appl. Phys. 111, 104513 (2012) Additional information on J. Appl. Phys. For AlGaN/GaN heterojunction field-effect transistors, on-state-bias-stress (on-stress)-induced trapping effects were observed across the entire drain access region, not only at the gate edge. However, during the application of on-stress, the highest electric field was only localized at the drain side of the gate edge. Using the location of the highest electric field as a reference, the trapping effects at the gate edge and at the more distant access region were referred to as localized and non-localized trapping effect, respectively. Using two-dimensional-electron-gas sensing-bar (2DEG-sensing-bar) and dual-gate structures, the non-localized trapping effects were investigated and the trap density was measured to be $1.3 Â 10 12 cm À2 . The effect of passivation was also discussed. It was found that both surface leakage currents and hot electrons are responsible for the non-localized trapping effects with hot electrons having the dominant effect. Since hot electrons are generated from the 2DEG channel, it is highly likely that the involved traps are mainly in the GaN buffer layer. Using monochromatic irradiation (1.24-2.81 eV), the trap levels responsible for the non-localized trapping effects were found to be located at 0.6-1.6 eV from the valence band of GaN. Both trap-assisted impact ionization and direct channel electron injection are proposed as the possible mechanisms of the hot-electron-related non-localized trapping effect. Finally, using the 2DEG-sensing-bar structure, we directly confirmed that blocking gate injected electrons is an important mechanism of Al 2 O 3 passivation. V C 2012 American Institute of Physics.

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Section: Introductionmentioning

confidence: 99%

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Hu¹,

Hashizume²

2012

Journal of Applied Physics

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“…Conditions 4 and 5 have greater rate ranges since there was little difference between the initial and final drain current values, which resulted in the same maximum error of 0.107 mA. Also included in Figure 3 are reference lines that pass through the center point of Condition 1 and assume activation energies of 2.09 (used previously in this paper), 1.6, and 2.47 eV (the range of values surveyed in [5] that resulted from DC testing). Figure 3, the portion of the graph containing these conditions is magnified in Figure 4.…”

Section: -H Testmentioning

confidence: 93%

“…Despite the commercialization of GaN HEMTs for some ground-based applications, mysteries about the device reliability remain [5], as evidenced by the continued research of their life expectancy. These unanswered questions have inhibited their use for military and space applications, where demonstrated long product lifetimes are required.…”

Section: Introductionmentioning

confidence: 99%

“…In other words, the high temperatures cannot "turn on" different and more temperature-sensitive mechanisms or mask unknown lower-temperature mechanisms. Other assumptions of the Arrhenius technique, such as the existence of one unique temperature (i.e., T 1 ) that describes the device at a specific bias condition, are known issues but will not be investigated in detail are whether or not surface, channel, or hot electron temperatures should be used as the critical temperature for analysis [5]. The estimation of the temperature at the site of degradation/failure is critical.…”

Section: Introductionmentioning

confidence: 99%

“…In addition to the query of the critical temperature for analysis in [5], the authors explored the validity of the assumption that the failure mechanisms in GaN HEMTs follow the Arrhenius model. Furthermore, [9,10] reported that the gate degradation in GaN HEMTs depends strongly on electric field but weakly on temperature.…”

Section: Introductionmentioning

confidence: 99%

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Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

et al. 2016

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Abstract:The purpose of this work was to investigate the validity of Arrhenius accelerated-life testing when applied to gallium nitride (GaN) high electron mobility transistors (HEMT) lifetime assessments, where the standard assumption is that only critical stressor is temperature, which is derived from operating power, device channel-case, thermal resistance, and baseplate temperature. We found that power or temperature alone could not explain difference in observed degradation, and that accelerated life tests employed by industry can benefit by considering the impact of accelerating factors besides temperature. Specifically, we found that the voltage used to reach a desired power dissipation is important, and also that temperature acceleration alone or voltage alone (without much power dissipation) is insufficient to assess lifetime at operating conditions.

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III – V and Wide Bandgap

Alomari¹

2022

Advances in Semiconductor Technologies

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Status of Reliability of GaN-Based Heterojunction Field Effect Transistors

Cited by 34 publications

References 83 publications

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing

III – V and Wide Bandgap

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