Stoichiometric p-type Cu 2 O thin films prepared by reactive sputtering with facing target

Ahn, Jeung Sun; Pode, Ramchandra; Lee, Kwang Bae

doi:10.1016/j.tsf.2017.01.008

Cited by 19 publications

(2 citation statements)

References 24 publications

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“…Since this initial report, numerous studies have reported the development of high-performance p-channel Cu 2 O TFTs fabricated at low temperatures with diverse deposition methods. [28][29][30][31][32][33][34][35][36][37] In the initial stage, processing optimization was mostly achieved by controlling the thickness and fabrication conditions, such as O 2 plasma density.…”

Section: Progress Of P-channel Oxide Thin-film Transistorsmentioning

confidence: 99%

Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

Kim

Jeong

2021

Physica Rapid Research Ltrs

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Oxide semiconductors are considered as one of the most promising candidates for back‐end‐of‐line transistors for monolithic 3D integration due to various advantages, such as complementary metal–oxide–semiconductor (CMOS)‐compatible method, low fabrication temperature, and promising electrical characteristics. As such, the demand for p‐type oxide semiconductors that are comparable to their n‐type oxide counterparts is increasing. However, the inferior electrical characteristics of p‐channel field‐effect transistors based on oxide semiconductors hinder their widespread application. Thus, the development of high‐performance p‐type oxide semiconductors is essential for their implementation in next‐generation electronics, which have requirements such as innovative form factors, high power efficiencies, and superior transparency. Herein, strategies for improving the device performances of p‐type oxide semiconductors fabricated via CMOS‐compatible methods are reviewed from a material science and device physics perspective, and a brief history of p‐type oxide semiconductors is discussed. Furthermore, critical issues for p‐type oxide semiconductors, such as the transport mechanism, bias stress stability, high off‐current, and ambipolar behavior, are discussed.

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Section: Progress Of P-channel Oxide Thin-film Transistorsmentioning

confidence: 99%

Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

Kim

Jeong

2021

Physica Rapid Research Ltrs

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“…But doping by copper ions which are of +1 valence promotes p-type. Indeed, Ahn et al [65] reported that Cu 2 O is a p type semiconductor. This makes that free charge carrier density can be classified as follows:…”

Section: Opto-thermal Investigationmentioning

confidence: 99%

Nanostructured device based on coated ZnO layer as a window in solar cell applications

Mokhtari

Benhaliliba

Boukhachem

et al. 2018

Materials Science-Poland

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This work highlights some physical properties related to the influence of aluminum, tin and copper incorporation on nanostructured zinc oxide (ZnO:M; M:Al, Sn and Cu) thin films prepared by ultrasonic spray pyrolysis technique (USP) on glass substrate at 350±5°C. For the as-grown layers, M-to Zn-ratio was fixed at 1.5 %. The effects of metal doping on structural, morphological, optical and electrical properties were investigated. X-ray diffraction pattern revealed that the as-prepared thin films crystallized in hexagonal structure with (0 0 2) preferred orientation. The surface topography of the films was performed by atomic force microscopy. AFM images revealed inhibition of grain growth due to the doping elements incorporation into ZnO matrix, which induced the formation of ZnO nanoparticles. Optical measurements showed a high transparency around 90 % in visible range. Some optical parameters, such as optical band gap, Urbach energy, refractive index, extinction coefficient and dielectric constant were studied in terms of doping element. Particularly, dispersion of refractive index was discussed in terms of both Cauchy and single oscillator model proposed by Wemple and DiDomenico. Cauchy parameters and single oscillator energy E 0 as well as dispersion energy E d were calculated. Finally, electrical properties were investigated by means of electrical conductivity and Hall effect measurements. The measurements confirmed n type conductivity of the prepared thin films and a good agreement between the resistivity values and the oxidation number of doping element. The main aim of this work was the selection of the best candidate for doping ZnO for optoelectronics applications. The comparative study of M doped ZnO (M:Al, Sn and Cu) was performed. High rectifying efficiency of the Al/n-ZnO/p-Si/Al device was achieved and non-ideal behavior was revealed with n > 4.

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Hydrogen Production Through Solar-Driven Water Splitting: Cu(I) Oxide-Based Semiconductor Nanoparticles as the Next-Generation Photocatalysts

Shyamal

Satpati

Maity

et al. 2019

Nanostructured Materials for Energy Related Applications

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Stoichiometric p-type Cu 2 O thin films prepared by reactive sputtering with facing target

Cited by 19 publications

References 24 publications

Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

Nanostructured device based on coated ZnO layer as a window in solar cell applications

Hydrogen Production Through Solar-Driven Water Splitting: Cu(I) Oxide-Based Semiconductor Nanoparticles as the Next-Generation Photocatalysts

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