Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

Abstract

Oxide semiconductors are considered as one of the most promising candidates for back‐end‐of‐line transistors for monolithic 3D integration due to various advantages, such as complementary metal–oxide–semiconductor (CMOS)‐compatible method, low fabrication temperature, and promising electrical characteristics. As such, the demand for p‐type oxide semiconductors that are comparable to their n‐type oxide counterparts is increasing. However, the inferior electrical characteristics of p‐channel field‐effect transistors based on oxide semiconductors hinder their widespread application. Thus, the development of high‐performance p‐type oxide semiconductors is essential for their implementation in next‐generation electronics, which have requirements such as innovative form factors, high power efficiencies, and superior transparency. Herein, strategies for improving the device performances of p‐type oxide semiconductors fabricated via CMOS‐compatible methods are reviewed from a material science and device physics perspective, and a brief history of p‐type oxide semiconductors is discussed. Furthermore, critical issues for p‐type oxide semiconductors, such as the transport mechanism, bias stress stability, high off‐current, and ambipolar behavior, are discussed.

Recent progress on the effects of impurities and defects on the properties of Ga2O3

“…However, the appearance of Bi 2 O 3 provides a new idea for p-type doping in semiconductors. 288 The feature of this p-type oxide is that the s orbitals of Bi will hybridize with the O orbitals when the compound is formed. Then as a consequence of hybridization a low accepter level is introduced in the bandgap.…”

Junctionless Electric‐Double‐Layer Thin‐Film Transistors with Logic Functions

“…With the rapid development of electronics, the performance of TFTs has improved significantly and is now widely used in the fields of displays, [4] sensors, [5] synaptic bionic devices, [6] and flexible electronic devices. [7,8] In 2 O 3 with an optical bandgap of %3.75 eV is one of the potential channel layer candidates because of its high light transmission, chemical stability, and high mobility. [9] However, TFTs with conventional dense oxide gate dielectrics usually require large operating voltages due to the weak capacitive coupling between the active layer and the gate dielectric, which greatly limits their application in the field of low-power electronic devices.…”

Chemical Vapor Deposition and Thermal Oxidation of Cuprous Phosphide Nanofilm

“…Due to the intrinsic band structure and crystal defects, inorganic semiconductors usually exhibit natural n-type transporting property [1]; therefore, the development of a p-type inorganic semiconductor attracts considerable interest for the development of novel devices based on p-n junctions [2][3][4]. Copper compounds generally show ptype properties, such as cuprous oxide, cuprous sulfide and cuprous halide [5][6][7], and cuprous phosphide (Cu 3 P) is one of them.…”