Stoichiometry-Controlled InP-Based Quantum Dots: Synthesis, Photoluminescence, and Electroluminescence

Li, Yang; Hou, Xiaoqi; Dai, Xingliang; Yao, Zhenlei; Lv, Liulin; Jin, Yizheng; Peng, Xiaogang

doi:10.1021/jacs.8b12908

Cited by 350 publications

(409 citation statements)

References 46 publications

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“…Therefore, the transmittance of n ‐SnO 2 and n ‐SnO 2 /InP/ZnS QDs ETLs deposited on ITO glasses were characterized. As shown in Figure a, compared to the ITO, the solution‐processed n ‐SnO 2 ETL displays an excellent transmittance property over the absorption range of 350–450 nm, this phenomenon is consistent with other report 36. The improved transmittance is beneficial to enhance the light absorption of PM6:Y6 active layer.…”

Section: Resultssupporting

confidence: 89%

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Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Peng

Yan

Yang

et al. 2020

Adv Elect Materials

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N‐type tin oxide (n‐SnO2) nanoparticle film has shown great potential as an electron transport layer (ETL) in fabricating highly efficient organic solar cells (OSCs) due to its low‐temperature preparation and high electrical conductivity. However, surface defects on the n‐SnO2 nanoparticles generated by the solution‐processed approach seriously limit the performance of the OSCs with n‐SnO2 ETL. InP/ZnS quantum dots (QDs) are employed to passivate the surface defects of n‐SnO2 ETL, and an inverted OSC using PM6:Y6 as active layer achieves a power conversion efficiency (PCE) of 15.22%, much higher than that of a device based on pure n‐SnO2 ETL (13.86%). The synergistic enhancement of the device open‐circuit voltage (Voc) and fill factor (FF) is attributed to the improved morphologies of PM6:Y6 layer on the QDs/ETL, increased charge extraction and collection efficiency, and decreased monomolecular recombination caused by the defect‐trapped charge carriers in the solar cell. Moreover, the inverted device with n‐SnO2/InP/ZnS QDs ETL show a much higher stability than that of the conventional PEDOT:PSS based one. This work presents a promising QDs passivation strategy on n‐SnO2 ETL to develop efficient and stable OSCs.

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Section: Resultssupporting

confidence: 89%

“…The Auger peaks of Sn 3d and O 1s can also been clearly observed. Besides, the peaks of In 3d5/2 and 3d3/2 at 444.5 and 452.1 eV and of P 2p at 138.9 eV suggest the presence of In‐P bonds 35,36. The Zn 2p core peak is presented in Figure 2e, resolving into doublet peaks at 1022.1 eV for Zn 2p3/2 and 1043.2 eV for Zn 2p1/2.…”

Section: Resultsmentioning

confidence: 95%

Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Peng

Yan

Yang

et al. 2020

Adv Elect Materials

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“…For instance, with the ZnSe inner shells and thin ZnS outer shells-generally true for the blue-emitting QLEDs in Fig. 5 and those non-cadmium InP QLEDs 49 , removal of zinc carboxylate ligands by either amines or phosphines is less controllable and sometimes reduces photoluminescence efficiency ( Supplementary Fig. 9), which would counteract the improvement of device performance by the electrochemically inert ligands.…”

Section: Electroluminescence Of Qds By Gradual Ligand Replacementmentioning

confidence: 99%

Electrochemically-stable ligands bridge the photoluminescence-electroluminescence gap of quantum dots

et al. 2020

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Colloidal quantum dots are promising emitters for quantum-dot-based light-emitting-diodes. Though quantum dots have been synthesized with efficient, stable, and high colour-purity photoluminescence, inheriting their superior luminescent properties in light-emitting-diodes remains challenging. This is commonly attributed to unbalanced charge injection and/or interfacial exciton quenching in the devices. Here, a general but previously overlooked degradation channel in light-emitting-diodes, i.e., operando electrochemical reactions of surface ligands with injected charge carriers, is identified. We develop a strategy of applying electrochemically-inert ligands to quantum dots with excellent luminescent properties to bridge their photoluminescence-electroluminescence gap. This material-design principle is general for boosting electroluminescence efficiency and lifetime of the light-emitting-diodes, resulting in record-long operational lifetimes for both red-emitting light-emitting-diodes (T 95 > 3800 h at 1000 cd m −2) and blue-emitting light-emitting-diodes (T 50 > 10,000 h at 100 cd m −2). Our study provides a critical guideline for the quantum dots to be used in optoelectronic and electronic devices.

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“…Quantum‐dot light‐emitting diodes (QLEDs) may fully exploit the superior optoelectronic properties and excellent solution processability of colloidal quantum dots (QDs), promising a new generation of high‐performance, large‐area, and low‐cost electroluminescence devices . State‐of‐the‐art QLEDs use the most effectively developed CdSe‐based core–shell QDs as emitters .…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Quantum‐Dot Light‐Emitting Diodes Using NiO_x Hole‐Injection Layers with a High and Stable Work Function

Lin

Dai

Liang³

et al. 2019

Adv Funct Materials

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Solution-processed oxide thin films are actively pursued as hole-injection layers (HILs) in quantum-dot light-emitting diodes (QLEDs), aiming to improve operational stability. However, device performance is largely limited by inefficient hole injection at the interfaces of the oxide HILs and highionization-potential organic hole-transporting layers. Solution-processed NiO x films with a high and stable work function of ≈5.7 eV achieved by a simple and facile surface-modification strategy are presented. QLEDs based on the surface-modified NiO x HILs show driving voltages of 2.1 and 3.3 V to reach 1000 and 10 000 cd m −2 , respectively, both of which are the lowest among all solution-processed LEDs and vacuum-deposited OLEDs. The device exhibits a T 95 operational lifetime of ≈2500 h at an initial brightness of 1000 cd m −2 , meeting the commercialization requirements for display applications. The results highlight the potential of solution-processed oxide HILs for achieving efficient-driven and long-lifetime QLEDs.

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Stoichiometry-Controlled InP-Based Quantum Dots: Synthesis, Photoluminescence, and Electroluminescence

Cited by 350 publications

References 46 publications

Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Electrochemically-stable ligands bridge the photoluminescence-electroluminescence gap of quantum dots

High‐Performance Quantum‐Dot Light‐Emitting Diodes Using NiO_x Hole‐Injection Layers with a High and Stable Work Function

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Stoichiometry-Controlled InP-Based Quantum Dots: Synthesis, Photoluminescence, and Electroluminescence

Cited by 350 publications

References 46 publications

Passivating Surface Defects of n‐SnO2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Passivating Surface Defects of n‐SnO2 Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Electrochemically-stable ligands bridge the photoluminescence-electroluminescence gap of quantum dots

High‐Performance Quantum‐Dot Light‐Emitting Diodes Using NiOx Hole‐Injection Layers with a High and Stable Work Function

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Product

Resources

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Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

Passivating Surface Defects of n‐SnO₂ Electron Transporting Layer by InP/ZnS Quantum Dots: Toward Efficient and Stable Organic Solar Cells

High‐Performance Quantum‐Dot Light‐Emitting Diodes Using NiO_x Hole‐Injection Layers with a High and Stable Work Function