Strain compensation for InGaAs–AlAs–AlAsSb coupled double quantum wells by controlling the barrier layer composition

Improvement of XPM efficiency in InGaAs/AlAsSb coupled quantum wells using InAlAs coupling barrier for intersubband transition optical switch

“…AlAs layers with a thickness of 1 ML were inserted between the Si-doped InGaAs quantum wells and the AlAsSb barriers because they suppress the exchange reactions between the As and Sb atoms at the InGaAs-to-AlAsSb interface. The tensile strain produced by the insertion of AlAs layers was compensated by increasing the Sb content of the AlAsSb barriers [6]. After the growth of the epitaxial layer, mesa waveguide structures with a height of 2-µm mesa were fabricated by dry-etching.…”

Highly strained InAlP/InGaAs-based coupled double quantum wells on InP substrates

“…In a heterostructure, the quality of heterointerface is very important for obtaining good crystalline and optical properties. [16][17][18][19] Due to the high vapor pressure and diffusibility of group V atoms, a highquality interface is difficult to obtain between different group V layers. Thus, a change in the designe of the layer order of the CDQW structure is required, i.e., minimization of the change in constituent atoms at the heterointerface.…”