Strain effects on device characteristics: Implementation in drift-diffusion simulators

Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL

“…simulator using our model. The simulation results well reproduce all the measured data, with a clear separation between π l and π t in the 110 channel which can't be expressed by the model in [2]. The parameters used here are summarized in Table 1.…”

“…We find that, in the high tensile region with CESL, the current enhancement of the 110 channel is greater than that of 100 . The difference between the 110 mobility and that of 100 is mainly derived from the μ xy of (2) which becomes larger with the greater shear tensile strain ε xy applied with the 110 tensile stress of CESL. In Fig.…”

“…To obtain the new model, we extended a simple mobility model for strain effect in Si band structure [2], to include both the shear strain and the quantum confinement effect in the inversion layer of nMOSFETs. Let's begin by looking at the Bir-Pikus effective Hamiltonian near the X point [3].…”

“…The second term is the origin of difference between longitudinal piezo-coefficient π l and transverse piezo-coefficient π t in the 110 channel. The parameter s, which is omitted in [2], expresses the dependence of effective mass on shear strain ε xy . The lowest subband energy E z is expressed as C qm m 0 m l 1 3 qF 2 3 by the conventional quantization method for the inversion layer.…”

Efeito da tensão mecânica no ruído de baixa frequência de transistores SOI planares e tridimensionais.

“…Adicionalmente foi incluído neste modelo a deformação de potencial (DeformationPotential) e um modelo de mobilidade que considera as subfaixas (73,74,75 • 100 nm de espessura de silício policristalino…”