Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods

Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells

“…It should be mentioned that the strain due to the lattice constant difference between SiGe and Si plays a very important role during the etching process, which was discussed in our previous research work. 12 Based on the above SEM results, the heterogeneous nanorods with a uniform size distribution in 3D space have been achieved in our samples. As shown in Fig.…”

“…Detailed MQW growth conditions and characterizations are available elsewhere. 12 Subsequently, the ECA was performed on the MQWs by using a mixture of 40% hydrofluoric acid solution and ethanol in a volume ratio of 1:2. Samples A and B were etched with a current density of 20 mA/cm 2 for 8 min and 27 mA/cm 2 for 15 min, respectively.…”

“…More recently, we have reported on the mechanism of strain-induced anodization of SiGe/Si multiple quantum wells (MQWs) to form high density SiGe/Si heterogeneous nanorods (HNRs). 12 The nanorods with a density up to 2 Â 10 11 cm À2 and a relatively narrow distribution in size were obtained. In this paper, we investigated the microcavity effects of the SiGe/Si HNR prepared by electrochemical anodization (ECA) of SiGe/Si MQWs.…”