Strain induced changes in magnetization of amorphous Co95Zr5 based multiferroic heterostructures

Abstract

A clear change in the magnetic anisotropy in a layer of amorphous Co95Zr5 is obtained at the orthorhombic phase transition of the BaTiO3 substrate. The use of an amorphous buffer layer between the ferroelectric substrate and amorphous magnetic film shows that bulk strain governs the change in the magnetic anisotropy of our ferromagnetic-ferroelectric heterostructure. Moreover, we show that the thermal magnetization curves exhibit anisotropic behavior

Tensile deformations of the magnetic chiral soliton lattice probed by Lorentz transmission electron microscopy

“…with κ = √ 1 − κ 2 is being the complementary modulus. As a next step, consider the following expression which provides the answer (19).…”

“…Strain engineering techniques have been successfully employed to manipulate magnetic moments in perovskite-based multiferroics [10][11][12][13][14][15], multiferroic thin-film heterostructures [16], and in nanowires [17]. A change in the magnetic anisotropy governed by strain is clearly demonstrated in ferromagnetic-ferroelectric [18,19] and ferrite-ferroelectric heterostructures [20] due to structural or metal-insulator [21] phase transformations in the material. In addition, strain has long been of interest in superconductors, with recent work having shown it may be used to alter the pair formation mechanism [22] and the transition temperature [23] of different materials.…”

Controlling electron propagation on a topological insulator surface via proximity interactions

“…Clearly, a properly operating control valve is critical, i.e., to switch the magnetization by 90 • either in plane or out of plane. This can be realized by using the magnetoelectric effect or multiferroic materials/structures [31][32][33][34][35]. Here, we simply assume that the direction of magnetization can be manipulated by the gate voltage instead of going into details of the methods.…”

Tensile deformations of the magnetic chiral soliton lattice probed by Lorentz transmission electron microscopy

“…Strain engineering techniques have been successfully employed to manipulate magnetic moments in perovskite-based multiferroics [10][11][12][13][14][15], multiferroic thin-film heterostructures [16], and in nanowires [17]. A change in the magnetic anisotropy governed by strain is clearly demonstrated in ferromagnetic-ferroelectric [18,19] and ferrite-ferroelectric heterostructures [20] due to structural or metal-insulator [21] phase transformations in the material. In addition, a great variety of applications are related to the development of stretchable electronics, in which intrinsic flexible functional materials are able to operate under mechanical strain [22][23][24].…”