Strain induced x-ray absorption linear dichroism in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">La</mml:mi><mml:mn>0.7</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">Sr</mml:mi><mml:mn>0.3</mml:mn></mml:msub><mml:mi mathvariant="normal">Mn</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>thin films

Aruta, C.; Ghiringhelli, G.; Tebano, A.; Boggio, Norberto; Brookes, N. B.; Medaglia, P. G.; Balestrino, G.

doi:10.1103/physrevb.73.235121

Cited by 129 publications

(107 citation statements)

References 19 publications

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“…6c) at B = 1 T (when the FM phase is suppressed) have the same behavior as for the films on the LAO substrate (and on the NGO substrate too, not shown here). As a consequence, in LSMO films grown on STO and NGO the C-type AF phase is stabilized regardless of the small in-plane tensile strain, which would rather be expected to favor the A-type AF phase 12,17,25,26 . Therefore, in thin films grown on STO and NGO the FM easy axis lays in the ab-plane whereas the AF easy axis is along the c-axis.…”

Section: Resultsmentioning

confidence: 99%

“…Chemical composition, strain and oxygen stoichiometry are considered the main parameters influencing the disorder-driven phase separation 11 . In thin films of La 0.7 Sr 0.3 MnO 3 (LSMO) the existence of intrinsic inhomogeneities has been explained in terms of structural macroscopic distortions induced by the strain with the substrate which favors preferential orbital occupation of the e g Mn orbitals 12,13 . While in the case of LSMO films grown on LaAlO 3 substrate the suppression of the DE magneto-transport properties is a "bulk" effect caused by strong in-plane compressive epitaxial strain, in the case of the LSMO films grown on SrTiO 3 (weak tensile strain) and NdGaO 3 (almost unstrained) the same phenomenon is a pure "interface/surface" effect 14 .…”

Section: Introductionmentioning

confidence: 99%

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Orbital occupation, atomic moments, and magnetic ordering at interfaces of manganite thin films

et al. 2009

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We have performed x-ray linear and circular magnetic dichroism experiments at the Mn L 2,3 -edge of the La 0.7 Sr 0.3 MnO 3 ultra thin films. Our measurements show that the antiferromagnetic (AF) insulating phase is stabilized by the interfacial rearrangement of the Mn 3d orbitals, despite the relevant magnetostriction anisotropic effect on the double-exchange ferromagnetic (FM) metallic phase. As a consequence, the Mn atomic magnetic moment orientation and how it reacts to strain differ in the FM and AF phases. In some cases a FM insulating (FMI) phase adds to the AF and FM. Its peculiar magnetic properties include in-plane magnetic anisotropy and partial release of the orbital moment quenching. Nevertheless the FMI phase appears little coupled to the other ones.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Orbital occupation, atomic moments, and magnetic ordering at interfaces of manganite thin films

et al. 2009

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“…Properties of thin films of CMR manganites are known to depend very sensitively on the film thickness, choice of substrate and suble variation in the deposition conditions [2]. As a comparison LaMnO 3 is most studied in this series both in bulk and thin film form [3], [4]. However, the behavior of other members (R= Pr, Nd) of the RMnO3 series has been much less studied; though they present equal number of interesting phenomena e.g.…”

Section: Introductionmentioning

confidence: 99%

“…However, apart from LaMnO 3 hardly any report present which shows the behavior of such compounds (R= Pr, Nd) in the thin film form.…”

Section: Introductionmentioning

confidence: 99%

Thickness Dependent X-Ray and Raman Studies of PrMnO3 Thin Films

Chaturvedi¹,

Sathe²

2014

IJMMM

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Abstract-Raman spectra of PrMnO 3 thin films deposited on lattice mismatched substrate (LaAlO 3 ) show a pronounced dependence on the film thickness and also on the degree of lattice mismatch. PrMnO 3 thin films were deposited by pulsed laser deposition on LaAlO 3 substrate, on this substrate the films experience in-plane compressive and therefore out-of-plane tensile strain. The gradual release of strain on increasing the film thickness is observed by the values of out-of-plane lattice parameters calculated by (002) reflection of films. A systematic trend in the Raman modes on increasing the thickness was also observed in the Raman spectra. All the Raman modes showed hardening on decreasing the thickness. This is attributed to the effect of strain gradually decreases on increasing the thickness of the films. Raman modes also seem to be sensitive to the lattice distortion in the thinner films.Index Terms-Jahn-teller distortion, manganite thin films, pulsed laser deposition, raman spectroscopy.

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“…The distortion of these octahedra is related to both mechanical strain caused by film/substrate misfit and the radial difference between La and Sr [2]. While x-ray characterization methods have illuminated oxidation states in these systems, [3] prior x-ray studies lack the spatial resolution of TEM. While the 3 + to 4 + trend as a function of LSMO thin film thickness is well established [1], the relationship between depth dependence and charge state along with accompanying structural effects is not well documented.…”

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Combined EELS and XAS Analysis of the Relationship between Depth Dependence and Valence in LSMO Thin Films

et al. 2017

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Lanthanum Strontium Manganite (LSMO) thin films are of interest due to their colossal magnetoresistive properties, which originates from double exchange related to the Mn 3+ to Mn 4+ charge states [1]. The local magnetic properties of the film are also directly related to the lattice strain at the film/substrate interface, and are tied to the strong lattice-electron interaction related to the MnO6 octahedra in the perovskite structure. The distortion of these octahedra is related to both mechanical strain caused by film/substrate misfit and the radial difference between La and Sr [2]. While x-ray characterization methods have illuminated oxidation states in these systems, [3] prior x-ray studies lack the spatial resolution of TEM. While the 3 + to 4 + trend as a function of LSMO thin film thickness is well established [1], the relationship between depth dependence and charge state along with accompanying structural effects is not well documented.In this talk, we will discuss the results of parallel analysis between XAS and EELS on the same films using the same data processing methods for both forms of spectra. To examine the relationship between charge state and depth dependence of ultra-thin L0.33Sr0.67MnO3 films, samples of various thicknesses are deposited on STO substrates by pulsed laser deposition. The recorded data is analyzed using the method of least squares fit to 3 + and 4 + reference spectra, collected using Mn2O3 and MnO2 powders. Figure 1a shows the results of this type of analysis in a representative region of the thin film sample. A map of valence state across the region shown in figure 1b, shows an increasing average Mn valence from interface to film surface as shown in figure 1c. We will discuss the results of a one-one comparison between XAS and EELS, providing validation of consistency between the two methods.Regarding lattice strain effects, it has also been shown that these films display an extended out of plane lattice parameter in the first few unit cells near the interface [8]. To further elucidate the magnetic properties of LSMO thin films, strain information was gathered and then processed to provide direct lattice displacements measurements from atomic resolution RevSTEM images [7]. Using accurate and precise revolving STEM measurements, our LSMO thin films are consistent with these prior works. Figure 2 shows that the out of plane strain on both the A (La/Sr) and B (Mn) sites near the interface reaches as high 2%, although, this degree of strain occurs over a narrower region on the A sites, than it does with respect to the B sites. Atom column intensities were then paired with the strain measurements to relate local chemistry to the degree of lattice strain. We will show that using these techniques in conjunction XAS experiments provide a more complete picture of the electronic behavior of these films, as it relates to both structure and chemistry [9].

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Strain induced x-ray absorption linear dichroism inLa0.7Sr0.3MnO3thin films

Cited by 129 publications

References 19 publications

Orbital occupation, atomic moments, and magnetic ordering at interfaces of manganite thin films

Orbital occupation, atomic moments, and magnetic ordering at interfaces of manganite thin films

Thickness Dependent X-Ray and Raman Studies of PrMnO3 Thin Films

Combined EELS and XAS Analysis of the Relationship between Depth Dependence and Valence in LSMO Thin Films

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