Strain relaxation of Ge1−xSix buffer systems grown on Ge (001)

Abstract

Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si (001) strain-relaxed buffers Appl. Phys. Lett. 101, 151601 (2012); 10.1063/1.4758486High-quality strain-relaxed SiGe films grown with low temperature Si buffer Strain relaxation of Ge films grown on a Si(001)2×1 surface by molecular beam epitaxy

Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

“…6 Both superlattices and step-graded layers have been used as techniques to reduce the strain energy while minimizing threading dislocations. [7][8][9][10][11][12][13] While some reduction was obtained, [7][8][9] the dislocation densities are still too high (ϳ10 9 cm Ϫ2 ) for any practical device application.…”