Strained germanium thin film membrane on silicon substrate for optoelectronics

Nam, Donguk; Sukhdeo, David S.; Roy, Arunanshu M.; Balram, Krishna C.; Cheng, Szu-Lin; Huang, Kevin; Yuan, Ze; Brongersma, Mark L.; Nishi, Yoshio; Miller, David; Saraswat, Krishna C.

doi:10.1364/oe.19.025866

Cited by 122 publications

(97 citation statements)

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“…The strain variation across the membrane is sufficiently small that optical device performance would not be affected by strain-induced variation in the Ge bandgap across the entire membrane. 23 Coupled with the smoother surface and absence of misfit dislocation network, compared to the bulk material, we have shown that these tensile strained Ge membranes are excellent strain tuning platforms for optical applications. …”

Section: à3mentioning

confidence: 73%

“…However, under sufficient tensile strain Ge can becoming a direct band gap material and so a tensile-strained Ge crystalline membrane could be a useful platform for a Ge light source, or other Ge-based optical devices. Recently, thin (<1 lm) freestanding Ge membranes 22,23 and various other suspended structures 13 have been fabricated through relatively simple processing. Nam et al 22 and Kurdi et al is not homogenous in its properties then other effects apparently observed on further straining may be a composite from a spectrum of different strain values and in actuality luminescence may be shaper, rather than broader, in response to strain.…”

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confidence: 99%

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Tensile strain mapping in flat germanium membranes

Rhead

Halpin

Shah

et al. 2014

Applied Physics Letters

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Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal space maps were obtained with ∼4 μm spatial resolution, from which detailed information on the strain distribution, thickness, and crystalline tilt of the membrane was obtained. We are able to detect a systematic strain variation across the membranes, but show that this is negligible in the context of using the membranes as platforms for further growth. In addition, we show evidence that the interface and surface quality is improved by suspending the Ge.

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Section: à3mentioning

confidence: 73%

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confidence: 99%

Tensile strain mapping in flat germanium membranes

Rhead

Halpin

Shah

et al. 2014

Applied Physics Letters

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“…Initial research effort was put into creating thin-film Ge membranes suspended in air, and then transferring external strain via various methods, such as water pressure, gas pressure, and stressor layer [17,[22][23][24][25][26][27][28]. More recently, a few researchers have presented novel structures to induce large tensile strain in Ge, in which a small residual tensile strain in Ge can be greatly amplified due to geometric effects [29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

Strained Ge Light Emitter with Ge on Dual Insulators for Improved Thermal Conduction and Optical Insulation

Kim¹,

Petykiewicz²,

Gupta³

et al. 2015

IEIE Transactions on Smart Processing and Computing

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Abstract:We present a new way to create a thermally stable, highly strained germanium (Ge) optical resonator using a novel Ge-on-dual-insulators substrate. Instead of using a conventional way to undercut the oxide layer of a Ge-on-single-insulator substrate for inducing tensile strain in germanium, we use thin aluminum oxide as a sacrificial layer. By eliminating the air gap underneath the active germanium layer, we achieve an optically insulating, thermally conductive, and highly strained Ge resonator structure that is critical for a practical germanium laser. Using Raman spectroscopy and photoluminescence experiments, we prove that the novel geometry of our Ge resonator structure provides a significant improvement in thermal stability while maintaining good optical confinement.

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“…12 Germanium membranes of thickness 1.6 lm have previously been fabricated by Nam et al 13 which were tensile strained to reduce the direct band gap for more efficient light emission. Devices for optoelectronic detection were fabricated on the membranes to demonstrate this effect, and later they demonstrated roomtemperature electroluminescence opening the possibility for Ge lasers.…”

Section: Introductionmentioning

confidence: 99%

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

Shah

Rhead

Halpin

et al. 2014

Journal of Applied Physics

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Copyright and reuse:The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.Copies of full items can be used for personal research or study, educational, or not-forprofit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way. Publisher's statement:Copyright ( A note on versions:The version presented in WRAP is the published version or, version of record, and may be cited as it appears here.For more information, please contact the WRAP A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm 2 . We show how the optical properties change with thickness, including appearance of Fabry-Perot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials. V C 2014 AIP Publishing LLC. [http://dx

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Strained germanium thin film membrane on silicon substrate for optoelectronics

Cited by 122 publications

References 30 publications

Tensile strain mapping in flat germanium membranes

Tensile strain mapping in flat germanium membranes

Strained Ge Light Emitter with Ge on Dual Insulators for Improved Thermal Conduction and Optical Insulation

High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

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