Strained InGaAs/InAlAs quantum wells for complementary III–V transistors

Growth of ultra-high mobility In0.52Al0.48As/InxGa1−xAs (x≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition

“…18,19) In addition, these n-channel devices may be integrated with compressively-strained (In)GaSb pchannel FETs for complementary III-V circuits in the post-Si era. 20) Perfecting the growth of In 0.52 Al 0.48 As/In x Ga 1¹x As (x ² 53%) quantum well devices on Si substrates will provide numerous benefits. However, epitaxy of these heterostructures on Si is challenging due to the 8% lattice mismatch, large thermal expansion coefficient mismatch and difference in crystal polarities.…”

Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

“…So, the real strain in MQWs is originated from the mismatch of AlGaAs barrier layers and GaAsSb well layers. According to X-ray diffraction theories, the real strain can be estimated by following equations 21 : where θ e is the Bragg angle of GaAsSb, θ s is the Bragg angle of AlGaAs, Δθ presents the shift of zero-order peak and ε is the real strain between AlGaAs and GaAsSb 20 . The Δθ values for four samples are 0.010°, 0.011°, 0.013° and 0.008°, respectively.…”

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

“…1b), the Al 0.8 Ga 0.2 Sb was replaced by Al 0.8 Ga 0.2 As x Sb 1Àx . 9,18,31 The Al 0.8 Ga 0.2 As x Sb 1Àx layers were grown as a digital alloy by toggling the As and Sb shutters while the Al and Ga shutters as well as the As and Sb valves remained open, allowing better control of composition compared with random alloys. [32][33][34] The 2-nm InAs layer was included as an etch-stop for device processing; its presence should not impact this study.…”

“…The lattice constant of InGaAs is only a few percent smaller than the InGaSb p-channel candidate material, and we recently reported growth of tensile-strained InGaAs on a 6.0-Å -lattice-constant buffer layer compatible with compressively strained GaSb. 31 In this work, we demonstrate strained buffer/channel antimonide layer thicknesses and compositions that could expand the available parameter space for multigate architectures and integration with InGaAs n-channel FETs for low-power logic applications.…”