2022
DOI: 10.1021/acsomega.2c01584
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Stress and Defect Effects on Electron Transport Properties at SnO2/Perovskite Interfaces: A First-Principles Insight

Abstract: The structural and electronic properties of interfaces play an important role in the stability and functionality of solar cell devices. Experiments indicate that the SnO 2 /perovskite interfaces always show superior electron transport efficiency and high structural stability even though there exists a larger lattice mismatch. Aiming at solving the puzzles, we have performed density-functional theory calculations to investigate the electronic characteristics of the SnO 2 … Show more

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Cited by 7 publications
(5 citation statements)
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“…Essentially, TiO 2 film consists of grain, grain boundaries, and numerous defects which play a role as barriers hindering the movement of photogenerated electrons. These crystal defects scatter the conduction of electrons and impede the flow of current leading to performance degradation of PSC [ 29 ].…”
Section: Resultsmentioning
confidence: 99%
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“…Essentially, TiO 2 film consists of grain, grain boundaries, and numerous defects which play a role as barriers hindering the movement of photogenerated electrons. These crystal defects scatter the conduction of electrons and impede the flow of current leading to performance degradation of PSC [ 29 ].…”
Section: Resultsmentioning
confidence: 99%
“…Essentially, TiO 2 film consists of grain, grain boundaries, and numerous defects which play a role as barriers hindering the movement of photogenerated electrons. These crystal defects scatter the conduction of electrons and impede the flow of current leading to performance degradation of PSC [29]. Figure 5a schematically illustrates the mechanism behind the movement of carriers in EB-evaporated TiO2 film, hence affecting the performance of PSC.…”
Section: Photovoltaic Performance Of Cspbi 3-x Br X Perovskite Solar ...mentioning
confidence: 99%
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“…In contrast, SnO 2 is recognized as a more promising ETM 45 with high light transmittance 46 originating from the wide bandgap of ∼3.6 eV 47 and electron mobility as high as ∼240 cm 2 V −1 s −1 . 48 Additionally, it exhibits superior chemical stability even when prepared using the solution method at low temperatures.…”
Section: Impact Of a Buried Interface On Device Performancementioning
confidence: 99%
“…[116][117][118] As mentioned above, the strain will cause a change in B─X bond length and B─X─B bond angle, and correspondingly, the change of orbital overlap will lead to a change in band dispersion. [119,120] Pu et al [121] studied the CMB and VBM of the perovskite layer and the SnO 2 ETL boundary under the influence of different strains, and obtained two different band alignments of the SnO 2 /perovskite interface by using the Perdew-Burkes-Ernzerhof (PBE)-Heyd-Scuseria-Ernzerhof (HSE) density functional method. At the PbI 2 /SnO 2 and MAI/SnO 2 interfaces, the CBM of perovskite increases with increasing tensile strain, and the CBM of SnO 2 decreases in band structure with increasing compressive strain (Figure 6g,h).…”
Section: Bandgapmentioning
confidence: 99%