Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes

Li, Yuan; Wang, Wenliang; Li, Xiaochan; Huang, Lihua; Lin, Zhien; Zheng, Yulin; Chen, Xiaofeng; Li, Guoqiang

doi:10.1016/j.jallcom.2018.09.031

Cited by 35 publications

(22 citation statements)

References 39 publications

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“…3 μm thick high-quality GaN epitaxial films grown on Si substrates were obtained, with the FWHMs for the 002 and 102 reflection X-ray rocking curves being 272 and 297 arcsec, respectively. 46 The reported FWHM values for the 002 and 102 reflections of GaN after nucleation on patterned sapphire are 201 arcsec and 275 arcsec, respectively. 30 Our work reports that the FWHM values for the 002 and 102 reflections of the GaN nucleation layer on PGS substrates are 241 arcsec and 271 arcsec, and its quality is similar to that of GaN grown on substrates prepared by other techniques.…”

Section: Resultsmentioning

confidence: 99%

Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

Liu

Wang

et al. 2022

CrystEngComm

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Section: Resultsmentioning

confidence: 99%

Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

Liu

Wang

et al. 2022

CrystEngComm

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“…Recently, there has been a demand for the stable Hall sensor operation at extreme temperatures [23,24] and also in harsh radiation environments as encountered in space exploration, determination of Curie temperatures of ferromagnetic materials [25], magnetic diagnosis of thermonuclear reactors [26] and current sensing in electric vehicles [27]. Emergence of new promising materials and advances in processing technologies continue to propel research on Hall sensors [28][29][30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Kumar

Muralidharan

Narayanan

2021

IET Circuits, Devices & Syst

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The authors report experimental investigations on Hall sensors based on AlGaN/GaN heterojunctions grown on silicon 111 (Si 111) substrates. Realisation of two-dimensional electron gas-based Hall sensors on Si substrates can have the advantages of low cost and integrability with complementary metal-oxide semiconductor circuits. Design and fabrication of such Hall sensors and their characterisation over a wide temperature range of 75 to 500 K are reported. The authors experimentally investigate the temperature dependence of the transresistances, sheet resistance and current-related sensitivity (or gain) of such Hall sensors. The current-related sensitivity is shown to be reasonably constant over the complete temperature range and certain inevitable variations in current-related sensitivity can easily be compensated. The temperature dependence of the transresistance can be used for such compensation. The variation of the geometrical correction factor of the Hall sensor with the applied magnetic field strength and the operating temperature is also studied. The authors also demonstrate the possibility of realising Hall sensors with a high geometrical correction factor ( ≈0.97), which is practically insensitive to variations in temperature ( ≃2% from 75 to 500 K) and applied magnetic field, for applications such as in electromechanical devices.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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“…The surface quality of processed sapphire wafer plays a critical role in these applications, as well as in shape accuracy. Generally, the processed surface of sapphire wafer is required to be smooth and at without sub-surface damage to ensure the performance requirements in practice [5][6][7][8]. However, as a typical hard-brittle and di cult-to-process material, it is a great challenge for sapphire to satisfy those demands.…”

Section: Introductionmentioning

confidence: 99%

A Novel Polishing Process with Rigid-Flexible Composite Structure Plate and Its Performance in Polishing Sapphire Wafer

Chen

Wang

et al. 2021

Preprint

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A novel flexible polishing process has been developed for sapphire wafer by using a polishing plate with rigid-flexible composite structure to satisfy the demands of excellent surface shape accuracy and high surface topography quality simultaneously. This new polishing plate was fabricated by alternately casting and curing the ring structure of soft and hard unsaturated resins. It is found that the overall stiffness of the polishing plate is improved due to the “hard support frame” of rigid-flexible polishing plate, as well as the ability of removal selectivity of the polishing plate is strengthened. The topography quality and shape accuracy of sapphire wafer polished by presented novel polishing process have been compared with those polished by conventional flexible polishing, respectively. Both experiment and simulation results are shown that the surface roughness and topographical variations of sapphire wafer polished by the novel rigid-flexible composite structure polishing plate have been greatly improved. Comparing with the conventional flexible polishing, the surface shape accuracy of the sapphire wafer polished by the presented novel polishing process can be improved by 54.1%.

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Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes

Cited by 35 publications

References 39 publications

Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

A Novel Polishing Process with Rigid-Flexible Composite Structure Plate and Its Performance in Polishing Sapphire Wafer

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