Stress and dislocations at cross-sectional heterojunctions in a cylindrical nanowire

Faster radial strain relaxation in InAs–GaAs core–shell heterowires

“…Such three-dimensional geometries dramatically modify the theoretical critical thresholds for strain relaxation. [4][5][6][7][8][9] For nanowire core diameters below critical thresholds, the volume strain energy is too small for dislocations, meaning coherent axial or core-shell geometries are theoretically feasibly consistent with experimental observations. 10 Barriers to the nucleation of misfit dislocations have often resulted in larger critical thicknesses in planar systems, 11 also likely true for nanowires.…”

Growth, Thermodynamics, and Electrical Properties of Silicon Nanowires

“…According to his estimate, Si-Ge nanowire heterostructures should be dislocation free for diameters less than 40 nm. A further theoretical treatment of dislocations in axial nanowire heterostructures was published by Kästner et al 141 Axial Si-Ge heterostructures would be attractive from an electronics point of view, as the band gap of Ge is 0.46 eV smaller than the one of Si. Therefore, charge carriers would face a steeplechase when driven through the nanowire in the axial direction, similar to what has been demonstrated for III-V heterostructure nanowires.…”

Spontaneous Superlattice Formation in Nanorods Through Partial Cation Exchange

“…Such 1D superlattices exhibit confinement effects and are unusual because of their ability to tolerate large amounts of lattice mismatch without forming dislocations and degrading device performance (12,13). Strong coupling of electronic states makes them interesting for optical systems and good candidates for photonic applications.…”