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Semiconductor wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics, and microelectromechanical systems. The present overview concentrates on some basic issues associated with wafer bonding such as the reactions at the bonding interface during hydrophobic and hydrophilic wafer bonding, as well as during ultrahigh vacuum bonding. Mechanisms of hydrogen-implantation induced layer splitting ͑''smart-cut'' and ''smarter-cut'' approaches͒ are also considered. Finally, recent developments in the area of so-called ''compliant universal substrates'' based on twist wafer bonding are discussed.

Large-area pulsed laser deposition (PLD) has reached a state in terms of film quality and reproducibility which makes possible now real market applications of PLDYBazCu3074 (YBCO) thin films on both sides of R-plane sapphire substrates as HTSC devices in satellite and mobile communication systems. Bandpass filters optimized from PLD-YBCO thin films presently fulfill the requirements of the main national companies which are active in future communication techniques. A relatively simple PLD arrangement with fixed laser plume and rotating substrate, with an offset between the laser plume and the center of the substrate is employed to deposit laterally homogeneous 3-inch diameter Ag-doped YBCO thin films. With the experience of more than 1, OOO doublesided 3-inch diam. films a high degree of homogeneity and reproducibility of j, and R is reached. The extension up to &inch substrate diameter will increase the productivity of the flexible PLD technique considerably.Index Terms-High-temperature superconducting thin films, microwave devices, pulsed laser deposition, YBazCu3074.

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